公开(公告)号：DE3481148D1

公开(公告)日：1990-03-01

申请号：DE3481148

申请日：1984-11-30

Applicant: IBM

Inventor： GEIPEL HENRY JOHN JR ,  SCHAEFER CHARLES ANDREW ,  WHITE FRANCIS ROGER ,  WURSTHORN JOHN MICHAEL

IPC: H01L21/22 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/321 ,  H01L21/324 ,  H01L21/322

Abstract: A process is provided for fabricating a semiconductor structure wherein the structure has to be exposed to certain oxidizing conditions during certain of its processing steps, such as its high temperature annealing in an oxidizing ambient. It includes depositing a "sacrificial" layer, such as silicon, to provide a uniformly oxidizing surface during subsequent annealing operations. This sacrificial layer, which oxidizes uniformly, produces an oxide layer which also etches uniformly. Thus, after the annealing is completed, the surface oxide is removed through etching and the remaining sacrificial layer is then also removed through a different etching step.