公开(公告)号：DE3372150D1

公开(公告)日：1987-07-23

申请号：DE3372150

申请日：1983-10-21

Applicant: IBM

Inventor： GEIPEL HENRY JOHN ,  TROUTMAN RONALD ROY ,  WURSTHORN JOHN MICHAEL

IPC: H01L27/08 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/49 ,  H01L29/78 ,  H01L21/82

Abstract: A process is provided which forms a bulk CMOS structure by initially depositing an oxidation barrier layer (38) on an N type semiconductor substrate (12), which is finally used as gate dielectric, forming a P well (22) in the substrate (12) through a given segment of the barrier layer (38), removing a first segment of the barrier layer to form N+ regions (26, 28) for N channel source and drain, removing a second segment of the barrier layer (38) to form a P+ field region (51, 48), removing a third segment of the barrier layer (38) to form P+ regions (60, 62) for source and drain of a P channel device, forming a first control electrode (68) having a given work function for the P channel device which acts as an ion barrier and then forming a second control electrode (70) between the N channel source and drain regions having a work function different from that of the first control electrode.

公开(公告)号：DE3481148D1

公开(公告)日：1990-03-01

申请号：DE3481148

申请日：1984-11-30

Applicant: IBM

Inventor： GEIPEL HENRY JOHN JR ,  SCHAEFER CHARLES ANDREW ,  WHITE FRANCIS ROGER ,  WURSTHORN JOHN MICHAEL

IPC: H01L21/22 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/321 ,  H01L21/324 ,  H01L21/322

Abstract: A process is provided for fabricating a semiconductor structure wherein the structure has to be exposed to certain oxidizing conditions during certain of its processing steps, such as its high temperature annealing in an oxidizing ambient. It includes depositing a "sacrificial" layer, such as silicon, to provide a uniformly oxidizing surface during subsequent annealing operations. This sacrificial layer, which oxidizes uniformly, produces an oxide layer which also etches uniformly. Thus, after the annealing is completed, the surface oxide is removed through etching and the remaining sacrificial layer is then also removed through a different etching step.