公开(公告)号：DE2861271D1

公开(公告)日：1982-01-07

申请号：DE2861271

申请日：1978-11-27

Applicant: IBM

Inventor： SCHAIBLE PAUL MARTIN ,  SCHWARTZ GERALDINE COGIN ,  ROTHMAN LAURA BETH

IPC: B01J19/00 ,  C23F1/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/3213

Abstract: Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching.

公开(公告)号：DE3366774D1

公开(公告)日：1986-11-13

申请号：DE3366774

申请日：1983-07-13

Applicant: IBM

Inventor： SCHAIBLE PAUL MARTIN ,  SUIERVELD JOHN

IPC: H01L21/48 ,  H01L23/538 ,  H05K1/03 ,  H05K3/06 ,  H05K3/40 ,  H05K3/46

Abstract: A multilevel metallurgy is formed on a dielectric body, particularly a multilayer ceramic (MLC) body (10). The interconnection lines (22) and via studs (26) are formed as an integral structure from a blanket metal layer thus eliminating the interface beween the via pad and via stud. A second level of interconnections (25) can be formed on top of said first interconnection level.

公开(公告)号：DE3168374D1

公开(公告)日：1985-02-28

申请号：DE3168374

申请日：1981-10-20

Applicant: IBM

Inventor： SCHAIBLE PAUL MARTIN ,  SCHWARTZ GERALDINE COGIN

IPC: H01L21/302 ,  C23F1/00 ,  C23F4/00 ,  H01L21/3065 ,  H05K3/06 ,  H05K3/38 ,  H01L21/88

Abstract: A composite mask (5A, 6A) is formed by sequentially depositing blanket layers (5) and (6) of molybdenum and of a material respectively selected from the group consisting of MgO and Al2O3 on the surface of a copper layer (3), and producing in these layers (5) and (6) a pattern of openings corresponding to the negative of the desired copper pattern (3). Using said mask (5A, 6A) the portions of copper layer (3) exposed in said openings are removed, preferably by dry etching. MgO or Al2O3 adhere well to Mo and Mo adheres well to copper. The Mo layer (5A) also serves as a diffusion barrier for the copper. … The method is applicable in forming copper interconnect metallurgy for components such as semiconductor or dielectric substrates.

公开(公告)号：DE2617483A1

公开(公告)日：1976-12-09

申请号：DE2617483

申请日：1976-04-22

Applicant: IBM

Inventor： HARVILCHUCK JOSEPH MATTHEW ,  LOGAN JOSEPH SKINNER ,  METZGER WILLIAM CLIFFORD ,  SCHAIBLE PAUL MARTIN ,  RISEMAN JACOB ,  SCHWARTZ GERALDINE COGIN

IPC: C23F4/00 ,  H01L21/3065 ,  H01L21/32 ,  H01L21/3213 ,  H05K3/08 ,  C23C15/00