公开(公告)号：DE3676458D1

公开(公告)日：1991-02-07

申请号：DE3676458

申请日：1986-07-29

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  GUTHRIE WILLIAM LESLIE ,  MARKAREWICZ STANLEY RICHARD ,  MENDEL ERIC ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  PLISKIN WILLIAM AARON ,  RISEMAN JACOB ,  SCHIABLE PAUL MARTIN ,  STANDLEY CHARLES LAMBER

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306 ,  H01L21/60

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate (31) having a patterned insulating layer (32) of dielectric material thereon, is coated with a layer of metal (34). The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes (33) where it is left intact (34a). This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier.