公开(公告)号：AT50379T

公开(公告)日：1990-02-15

申请号：AT86114396

申请日：1986-10-17

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：DE3669016D1

公开(公告)日：1990-03-15

申请号：DE3669016

申请日：1986-10-17

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/90

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.

公开(公告)号：DE3676458D1

公开(公告)日：1991-02-07

申请号：DE3676458

申请日：1986-07-29

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  GUTHRIE WILLIAM LESLIE ,  MARKAREWICZ STANLEY RICHARD ,  MENDEL ERIC ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  PLISKIN WILLIAM AARON ,  RISEMAN JACOB ,  SCHIABLE PAUL MARTIN ,  STANDLEY CHARLES LAMBER

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/306 ,  H01L21/60

Abstract: A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate (31) having a patterned insulating layer (32) of dielectric material thereon, is coated with a layer of metal (34). The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes (33) where it is left intact (34a). This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier.

公开(公告)号：BR8604547A

公开(公告)日：1987-05-26

申请号：BR8604547

申请日：1986-09-23

Applicant: IBM

Inventor： CHOW MELANIE MIN-CHIEH ,  CRONIN JOHN EDWARD ,  GUTHRIE WILLIAM LESLIE ,  KAANTA CARTER WELLING ,  LUTHER BARBARA JEAN ,  PATRICK WILLIAM JOHN ,  PERRY KATHLEEN ALICE ,  STANDLEY CHARLES LAMBERT

IPC: H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/88 ,  H01L27/04

Abstract: The method comprises the following steps:… providing a substrate (3) having an underlying metallization (4) therein; placing an insulator (5, 6, 8) on said substrate (3); selectively removing first portions of said insulator at first locations, said first portions partially penetrating through said insulator; selectively removing second portions of said insulator at second locations, said second portions penetrating fully through the remainder of said insulator; said second portions being in alignment with some of said first portions; simultaneously depositing metal (9) over said insulator to form said overlying metallization in said first locations and said stud via connections in said second locations, and removing any of said metal (9) which overlies said insulator at locations other than said first locations. The method is applied for forming simultaneously an overlying metallization pattern and stud via connections to an underlying metallization.