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公开(公告)号:CA1113757A
公开(公告)日:1981-12-08
申请号:CA326206
申请日:1979-04-24
Applicant: IBM
Inventor: MAKOSCH GUNTER , SCHEDEWIE FRANZ , SCHMACKPFEFFER ARNO , ZILLER JORG
IPC: B23K15/08 , B23K26/06 , B23K26/073 , B23K26/382 , G02B27/09 , H01J37/30 , B23K26/00
Abstract: Device for Material Machining Using Electromagnetic or Corpuscular Beams The invention provides an improved method and apparatus for material processing by electromagnetic or corpuscular beams. The processing beam is modified by inverting means in the beam path which modifies the beam by axis symmetrical inversion of paraxial and off-axis cross-sectional areas of said beam. The modified beam is then focused at the material to be processed, e.g., for welding, drilling, cutting or the like.
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公开(公告)号:CA981961A
公开(公告)日:1976-01-20
申请号:CA138890
申请日:1972-04-05
Applicant: IBM
Inventor: FROSCH ALBERT , SCHMACKPFEFFER ARNO
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公开(公告)号:CA974112A
公开(公告)日:1975-09-09
申请号:CA149058
申请日:1972-08-09
Applicant: IBM
Inventor: SCHMACKPFEFFER ARNO , FROSCH ALBERT , JARISCH WALTER , ZILLER JORG
Abstract: A method is described for making holograms by means of linearly polarized object and reference beams, the reference beam being reflected inside the photosensitive emulsion. The plane of polarization of a linearly polarized reference beam includes an angle of 45 DEG with its plane of incidence. The beam is reflected under the critical angle of total internal reflection at the lower face of a photographic emulsion. The reflected beam is linearly polarized, too, its plane of polarization being turned by 90 DEG , so that no interference between these two beams is possible. An object beam passes a mask and is linearly polarized vertically either to the reference beam or to the reflected beam so that only one hologram can be formed and no undesired interaction between two holograms is possible when the mask is reproduced for exposure of a photoresist-covered semiconductor wafer.
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