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    Method of increasing the depth of focus and or the resolution of light microscopes by illuminating and imaging through a diaphragm with pinhole apertures
    1.
    发明授权
    Method of increasing the depth of focus and or the resolution of light microscopes by illuminating and imaging through a diaphragm with pinhole apertures 失效
    通过通过具有孔隙的膜片进行照相和成像来增加焦点深度和/或微型显微镜分辨率的方法

    公开(公告)号：US3926500A

    公开(公告)日：1975-12-16

    申请号：US52896574

    申请日：1974-12-02

    Applicant: IBM

    Inventor： FROSCH ALBERT ,  KORTH HANS ERDMANN

    IPC: G02B21/00 ,  G02B21/08 ,  G02B27/58 ,  G02B21/06 ,  G05D25/00

    CPC classification number: G02B27/0075 ,  G02B21/082 ,  G02B27/58

    Abstract: In order to increase the depth of focus of a high resolution microscope objective a diaphragm having small openings 25, 26 is rotatably mounted in plane 13 which is conjugate to object plane 12. Object 11 is illuminated (scanned) through semi-transparent mirror 19 and said diaphragm in such a way that light passing through said openings is sharply focused only on areas lying near to, or in object plane 12 within the depth of focus range of objective 2. Only light scattered or reflected from such areas passes through said openings substantially without losses and after passing through lens 20 provides a clear image of high contrast of those areas of object 11 which lie within the depth of focus of lens 2. Light coming (reflected, scattered) from all other areas of object 11 lying outside the depth of focus is subject to substantial losses so that no image appears at 22. If object 11 is moved cyclically with say 50 cps vertically to plane 12 so that all object points pass at least once through the depths of focus range of lens 2 a clear image of high contrast of all object points is visible at 22.

    METHOD FOR MAKING HOLOGRAMS
    4.
    发明专利
    METHOD FOR MAKING HOLOGRAMS 未知

    公开(公告)号：CA974112A

    公开(公告)日：1975-09-09

    申请号：CA149058

    申请日：1972-08-09

    Applicant: IBM

    Inventor： SCHMACKPFEFFER ARNO ,  FROSCH ALBERT ,  JARISCH WALTER ,  ZILLER JORG

    IPC: G03H1/04 ,  G03H1/00

    Abstract: A method is described for making holograms by means of linearly polarized object and reference beams, the reference beam being reflected inside the photosensitive emulsion. The plane of polarization of a linearly polarized reference beam includes an angle of 45 DEG with its plane of incidence. The beam is reflected under the critical angle of total internal reflection at the lower face of a photographic emulsion. The reflected beam is linearly polarized, too, its plane of polarization being turned by 90 DEG , so that no interference between these two beams is possible. An object beam passes a mask and is linearly polarized vertically either to the reference beam or to the reflected beam so that only one hologram can be formed and no undesired interaction between two holograms is possible when the mask is reproduced for exposure of a photoresist-covered semiconductor wafer.

    6.
    发明专利
    未知

    公开(公告)号：DE2140408A1

    公开(公告)日：1973-03-01

    申请号：DE2140408

    申请日：1971-08-12

    Applicant: IBM DEUTSCHLAND

    Inventor： SCHMACKPFEFFER ARNO DR ,  FROSCH ALBERT ,  JAERISCH WALTER DR ,  ZILLER JOERG

    IPC: G03H1/04 ,  G03H1/00 ,  G02B27/00

    Abstract: A method is described for making holograms by means of linearly polarized object and reference beams, the reference beam being reflected inside the photosensitive emulsion. The plane of polarization of a linearly polarized reference beam includes an angle of 45 DEG with its plane of incidence. The beam is reflected under the critical angle of total internal reflection at the lower face of a photographic emulsion. The reflected beam is linearly polarized, too, its plane of polarization being turned by 90 DEG , so that no interference between these two beams is possible. An object beam passes a mask and is linearly polarized vertically either to the reference beam or to the reflected beam so that only one hologram can be formed and no undesired interaction between two holograms is possible when the mask is reproduced for exposure of a photoresist-covered semiconductor wafer.

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