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公开(公告)号:JP2001205909A
公开(公告)日:2001-07-31
申请号:JP2000396889
申请日:2000-12-27
Applicant: IBM
Inventor: BRUNO MICHEL , SCHMIDT HEINZ , DELAMARCHE EMMANUEL , BIETSCH ALEXANDER
Abstract: PROBLEM TO BE SOLVED: To perform a printing of a large area, which is mechanized, regarding a stamp device which prints a pattern on the surface of a substrate. SOLUTION: This stamp device which prints a pattern on the surface of the substrate 4 is equipped with a carrier layer 1 having rigidity. The carrier layer 1 is equipped with a first surface and a second surface. On the first surface, a layer 3 on which the pattern is formed, made of a first material, is provided. On the second surface, a soft layer 5 made of a material which is softer than the first material is provided. The layer 3 on which the pattern is formed and the soft layer 5 function while cooperating, and even when a contact surface formed between the stamp and the substrate 4 is not accurately smooth and flat, a printing of a high quality is realized.
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公开(公告)号:JP2005319460A
公开(公告)日:2005-11-17
申请号:JP2005119127
申请日:2005-04-18
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor: DELAMARCHE EMMANUEL , JUNCKER DAVID , SCHMIDT HEINZ
CPC classification number: B82Y30/00 , B01J19/0046 , B01J2219/00353 , B01J2219/00367 , B01J2219/00369 , B01J2219/0038 , B01J2219/00418 , B01J2219/00468 , B01J2219/00585 , B01J2219/00596 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00621 , B01J2219/00637 , B01J2219/00675 , B01J2219/00677 , B01J2219/00722 , B01J2219/00743 , C23F1/08 , C40B40/06 , C40B50/14 , C40B60/14
Abstract: PROBLEM TO BE SOLVED: To provide a technique of confinement of a fluid on a surface, which enables the formation of a two-dimensional pattern.
SOLUTION: An apparatus for applying the fluid on the surface comprises a first conduit which directs the flow of a fist fluid towards the surface, and a second conduit which directs the flow of a second fluid away from the surface. The first conduit is arranged to the second conduit so that the second fluid substantially includes the first fluid when the apparatus operates. The first conduit includes a first aperture and the second conduit includes a second aperture. The first aperture is arranged at a certain distance from the second aperture.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题:提供一种在表面上限制流体的技术,这使得能够形成二维图案。 解决方案:用于在表面上施加流体的装置包括将第一流体的流动引向表面的第一导管和将第二流体的流动引导离开表面的第二导管。 第一管道被布置到第二管道,使得当设备操作时第二流体基本上包括第一流体。 第一导管包括第一孔,第二导管包括第二孔。 第一孔被布置在与第二孔相距一定距离处。 版权所有(C)2006,JPO&NCIPI
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公开(公告)号:JP2002356075A
公开(公告)日:2002-12-10
申请号:JP2002072713
申请日:2002-03-15
Applicant: IBM
Inventor: SCHMIDT HEINZ , JUNCKER DAVID , MICHEL BRUNO , WOLF HEIKO , GEISSLER MATTHIAS
Abstract: PROBLEM TO BE SOLVED: To provide a patterning mask enabling formation of a pattern with increased precision. SOLUTION: Regarding the patterning mask 6 having a substantially planar patterned printing layer 2, the printing layer 2 has a substantially non-elastic stencil layer 3 and a substantially elastic seal layer 4 fixed on the stencil layer 3. The seal layer 4 performs a function of a seal in regard to a liquid, viscous or gaseous material 7 that can be filled on a base 5 through the patterned printing layer 2 when the layer 4 is in contact with the base 5. Moreover, the mask may have a mesh layer. The mesh layer has openings isolated by a solid element and having a two-dimensional regular pattern and rigidity can be given to the mesh plane thereof.
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公开(公告)号:JP2002294469A
公开(公告)日:2002-10-09
申请号:JP2002084108
申请日:2002-03-25
Applicant: IBM
Inventor: BIETSCH ALEXANDER , DELAMARCHE EMMANUEL , GEISSLER MATTHIAS , MICHEL BRUNO , SCHMIDT HEINZ
IPC: C23F1/00 , C23F1/02 , C23F1/34 , C23F1/40 , H01L21/768
Abstract: PROBLEM TO BE SOLVED: To provide a fine structure by etching a substrate having a region covered with self-assembly monomolecule(SAM). SOLUTION: A wet etching system for selectively forming a pattern on the substrate having the region covered with SAM and controlling an etching profile, includes (a) a fluid etching solution, and (b) additives having higher affinity for the region covered with the SAM than for the other region. The method for selectively forming the pattern on the substrate having the region covered with the SAM and controlling the etching profile, includes (a) a step of providing a fluid etching solution, (b) a step of adding the additives having the higher affinity for the region covered with SAM than for the other region to the above etching solution, and (c) a step of etching the above substrate with the above fluid etching solution containing the above additives.
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