STAMP DEVICE WHICH PRINTS PATTERN ON SURFACE OF SUBSTRATE

    公开(公告)号:JP2001205909A

    公开(公告)日:2001-07-31

    申请号:JP2000396889

    申请日:2000-12-27

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To perform a printing of a large area, which is mechanized, regarding a stamp device which prints a pattern on the surface of a substrate. SOLUTION: This stamp device which prints a pattern on the surface of the substrate 4 is equipped with a carrier layer 1 having rigidity. The carrier layer 1 is equipped with a first surface and a second surface. On the first surface, a layer 3 on which the pattern is formed, made of a first material, is provided. On the second surface, a soft layer 5 made of a material which is softer than the first material is provided. The layer 3 on which the pattern is formed and the soft layer 5 function while cooperating, and even when a contact surface formed between the stamp and the substrate 4 is not accurately smooth and flat, a printing of a high quality is realized.

    PATTERNING MASK AND PATTERNING METHOD
    3.
    发明专利

    公开(公告)号:JP2002356075A

    公开(公告)日:2002-12-10

    申请号:JP2002072713

    申请日:2002-03-15

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a patterning mask enabling formation of a pattern with increased precision. SOLUTION: Regarding the patterning mask 6 having a substantially planar patterned printing layer 2, the printing layer 2 has a substantially non-elastic stencil layer 3 and a substantially elastic seal layer 4 fixed on the stencil layer 3. The seal layer 4 performs a function of a seal in regard to a liquid, viscous or gaseous material 7 that can be filled on a base 5 through the patterned printing layer 2 when the layer 4 is in contact with the base 5. Moreover, the mask may have a mesh layer. The mesh layer has openings isolated by a solid element and having a two-dimensional regular pattern and rigidity can be given to the mesh plane thereof.

    METHOD FOR SELECTIVELY ETCHING SAM SUBSTRATE

    公开(公告)号:JP2002294469A

    公开(公告)日:2002-10-09

    申请号:JP2002084108

    申请日:2002-03-25

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a fine structure by etching a substrate having a region covered with self-assembly monomolecule(SAM). SOLUTION: A wet etching system for selectively forming a pattern on the substrate having the region covered with SAM and controlling an etching profile, includes (a) a fluid etching solution, and (b) additives having higher affinity for the region covered with the SAM than for the other region. The method for selectively forming the pattern on the substrate having the region covered with the SAM and controlling the etching profile, includes (a) a step of providing a fluid etching solution, (b) a step of adding the additives having the higher affinity for the region covered with SAM than for the other region to the above etching solution, and (c) a step of etching the above substrate with the above fluid etching solution containing the above additives.

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