公开(公告)号：DE2314193A1

公开(公告)日：1973-12-20

申请号：DE2314193

申请日：1973-03-22

Applicant: IBM

Inventor： SEIDEN PHILIP EDWARD ,  AVIRAM ARIEH

IPC: C09K3/00 ,  G02F1/03 ,  G02F1/05 ,  G11C11/00 ,  G11C11/21 ,  G11C13/02 ,  G11C13/04

公开(公告)号：DE2510821A1

公开(公告)日：1975-09-18

申请号：DE2510821

申请日：1975-03-12

Applicant: IBM

Inventor： AVIRAM ARIEH ,  FREISER MARVIN JOSEPH ,  SEIDEN PHILIP EDWARD ,  YOUNG WILLIAM ROBERT

IPC: B41M5/20 ,  H01G7/00 ,  H01L51/00 ,  H01L51/30 ,  H01L29/28 ,  C07C49/62 ,  C07C119/06

Abstract: There are described herein organic electronic devices of the acceptor-donor (A-D), acceptor-donor-acceptor (A-D-A), donor-acceptor-donor (D-A-D), acceptor-donor-acceptor-donor (A-D-A-D), types analogous to the p-n, p-n-p, n-p-n and p-n-p-n types in typical semiconductor devices. The A-D device suitably comprises a support or substrate upon which there is provided a layer of a conductive metal. On this metallic layer, there is provided in a thickness of about 25 to 50 Angstroms, a barrier layer organic compound. On the latter compound, there is provided a deposited metal conductor, the metal depositing suitably being effected by a technique such as vapor deposition. The A-D-A and D-A-D devices comprise a semiconductor or metallic body, on each surface of which there is provided in about a 25 to 50 Angstrom thickness, the aforementioned barrier layer compound. On each compound layer there is deposited a metal conductor. The barrier layer compound suitably is one whose molecules consist of two nonsymmetric, i.e., not same energy level, reversible redox portions separated by a tunneling bridge.

公开(公告)号：DE2232902A1

公开(公告)日：1973-02-15

申请号：DE2232902

申请日：1972-07-05

Applicant: IBM

Inventor： CALHOUN BERTRAM ALLEN ,  GIESS EDWARD AUGUST ,  KLOKHOLM ERIK ,  PLASKETT THOMAS STANLEY ,  ROSIER LAURENCE LEE ,  SEIDEN PHILIP EDWARD

IPC: H01F10/26 ,  C09D5/23 ,  H01F10/24 ,  B01J17/00