公开(公告)号：JPH0920942A

公开(公告)日：1997-01-21

申请号：JP16489596

申请日：1996-06-25

Applicant: IBM

Inventor： PANAYOTEISU KONSUTANTEINU ANDO ,  HARIKURIA DERIJIYANNI ,  JIEEMUZU MATSUKERU EDOUIN HAAP ,  CHIYAO KUN FUU ,  DEIRU JIYONASAN PIASON ,  SUKOTSUTO KEBUIN REINORUZU ,  KIN NIN TOUU ,  SHIPURIAN EMEKA UZOFU

IPC: C22C9/00 ,  C22C9/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/532

Abstract: Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

公开(公告)号：JPH0917790A

公开(公告)日：1997-01-17

申请号：JP16339896

申请日：1996-06-24

Applicant: IBM

Inventor： SHIRIRU KIYABURARU JIYUNIA ,  PATORITSUKU UIRIAMU DEHAABUEN ,  DANIERU CHIYAARUZU EEDERUSUTEI ,  DEEBITSUDO PIITAA KURAUSU ,  JIEEMUZU MANRII PORAADO ZA SAA ,  KIYARORU ERU SUTANISU ,  SHIPURIAN EMEKA UZOFU

IPC: C01G35/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L23/538 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To enhance an interconnecting thin film metal barrier layer in adhesion to a semiconductor structure of metal or various dielectrics by a method wherein a hexagonal TaN thin film is provided between a first material to trap and a second material so as to separate the second material from the first material. SOLUTION: A via-hole or a stud opening 11 is provided in a prescribed region on the bottom 17 of a groove 15 so as to come into contact with the conductive surface of a second interconnecting structure 18. The interconnecting structure 18 has a conductor 19 located in a groove 20 inside an insulating film 21. A liner 22 is provided to the conductor 19 and the bottom and side wall 27 of the groove 20, and a liner 23 of hexagonal TaN is formed on the bottom 17. In succession, a metal 24 is formed inside the groove 15 so as to substantially fill it up.