公开(公告)号：JPH0920942A

公开(公告)日：1997-01-21

申请号：JP16489596

申请日：1996-06-25

Applicant: IBM

Inventor： PANAYOTEISU KONSUTANTEINU ANDO ,  HARIKURIA DERIJIYANNI ,  JIEEMUZU MATSUKERU EDOUIN HAAP ,  CHIYAO KUN FUU ,  DEIRU JIYONASAN PIASON ,  SUKOTSUTO KEBUIN REINORUZU ,  KIN NIN TOUU ,  SHIPURIAN EMEKA UZOFU

IPC: C22C9/00 ,  C22C9/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/532

Abstract: Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.

公开(公告)号：JPH09181125A

公开(公告)日：1997-07-11

申请号：JP29996296

申请日：1996-11-12

Applicant: IBM

Inventor： PANAYOTEISU KONSUTANTEINUU AND ,  MADABU DATSUTA ,  HARIKURIA DERIJIYANNI ,  UIRUMA JIYAN HOOKANZU ,  SUN KUON KAN ,  KIISU TOMASU KUFUIETONIYAKU ,  GANGADAARA SUWAMI MATADO ,  SANPASU PURUSHIYOTAMAN ,  RIIZEN SHII ,  TON HOO MIN

IPC: B23K35/26 ,  B23K35/00 ,  B32B15/01 ,  C22C13/00 ,  C22C13/02 ,  H01L21/60 ,  H01L23/485 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To provide a connecting structure suitable for connecting a very small electronic circuit chip with a package. SOLUTION: This mutual connecting structure contains the following in order; an adhesion/barrier layer stuck on a passivated board (e.g. silicon wafer), an adhesion layer which is arbitrarily selected and added, a layer to which metal selected out of a group composed of Ni, Co, Fe, NiFe, NiCo, CoFe, NiCoFe can be soldered, and a leadless solder ball which contains a kind or a plurality of kinds of alloy elements selected out of tin, Bi, Ag and Sb which are main components and a kind or a plurality of kinds of elements arbitrarily selected out of a group composed of Zn, In, Ni, Co and Cu.