公开(公告)号：US3600241A

公开(公告)日：1971-08-17

申请号：US3600241D

申请日：1968-09-09

Applicant: IBM

Inventor： DOO VEN Y ,  SPIRO ANDREA

IPC: H01L21/00 ,  H01L21/322 ,  H01L21/74 ,  H01L23/29 ,  H01L23/544 ,  H01L7/00 ,  C23C11/00 ,  H01L7/36

CPC classification number: H01L23/544 ,  H01L21/00 ,  H01L21/3221 ,  H01L21/74 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/037 ,  Y10S148/04 ,  Y10S148/041 ,  Y10S148/043 ,  Y10S148/085 ,  H01L2924/00

Abstract: IN SEMICONDUCTOR DEVICE FABRICATION, AFTER DIFFUSION HAS BEEN CARRIED OUT AT ELEVATED TEMPERATURES THROUGH A SIO2 OR OTHER DIFFUSION BARRIER MASKS, THE MASK IS STRIPPED FROM THE SURFACE OF THE SEMICONDUCTOR SUBSTRATE, AND THE SURFACE OF THE SEMICONDUCTOR SUBSTRATE IS REOXIDIZED. THIS ELIMINATES SURFACE DEFECTS IN THE SEMICONDUCTOR SUBSTRATE WHICH TEND TO ARISE AT THE ELEVATED TEMPERATURES OVER RELATIVELY LONG PERIODS OF TIME NECASSRY FOR DIFFUSION. WHERE AN EPITAXIAL LAYER IS TO BE FORMED ON THE SURFACE OF THE SUBSTRATE, THE OXIDE LAYER IS FIRST REMOVED FROM THE SURFACE. THIS REDUCES STACKING FAULTS IN THE SUBSTRATE.

公开(公告)号：US3539759A

公开(公告)日：1970-11-10

申请号：US3539759D

申请日：1968-11-08

Applicant: IBM

Inventor： SPIRO ANDREA ,  WHITE WILLIAM H

IPC: H01L21/673 ,  C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  C30B31/00 ,  C30B31/14 ,  C30B35/00 ,  E04B9/20 ,  F27D3/12 ,  H01L21/205 ,  H01L21/22 ,  H01L31/10 ,  H05B5/00 ,  H05B9/00

CPC classification number: C30B25/12 ,  C30B31/00 ,  C30B35/00 ,  E04B9/20

公开(公告)号：CA905564A

公开(公告)日：1972-07-18

申请号：CA905564D

Applicant: IBM

Inventor： SPIRO ANDREA ,  WHITE WILLIAM H

公开(公告)号：DE1956055A1

公开(公告)日：1970-06-04

申请号：DE1956055

申请日：1969-11-07

Applicant: IBM

Inventor： SPIRO ANDREA ,  HENRY WNITE JUN WILLIAM

IPC: H01L21/673 ,  C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  C30B31/00 ,  C30B31/14 ,  C30B35/00 ,  E04B9/20 ,  F27D3/12 ,  H01L21/205 ,  H01L21/22 ,  H01L31/10 ,  B01J17/00

Abstract: 1287797 Minature furnace carriers INTERNATIONAL BUSINESS MACHINES CORP 5 Nov 1969 [8 Nov 1968] 54162/69 Heading F4B [Also in Division H1] A carrier of suscepter material, e.g. graphite, supporting a substrate 25 during heat treatment in a reaction chamber 10 comprises a boat 20 formed with circular pockets 30 each having a peripheral shoulder 34 supporting said substrate and spaced from the floor 36 by a distance “T where T is the thickness of a semi-conductor wafer before treatment, Additional support for the wafer may be provided by a central core (38, Fig. 6). The reaction chamber comprises a quartz tube 12 surrounded by a high frequency heating coil 14 and having a conduit 18 introducing reactants fron gaseous sources 20a, 20b, and 20c. Heat is induced in both the boat and the substrate and radiation and conduction from the former equalizes the heating effect on the substrate.

公开(公告)号：DE1944131A1

公开(公告)日：1970-03-19

申请号：DE1944131

申请日：1969-08-30

Applicant: IBM

Inventor： YOUNG DOO VEN ,  SPIRO ANDREA

IPC: H01L21/00 ,  H01L21/322 ,  H01L21/74 ,  H01L23/29 ,  H01L23/544 ,  H01L7/36

Abstract: 1,271,815. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 8 Sept., 1969 [9 Sept., 1968], No. 44314/69. Heading H1K. In the manufacture of a semi-conductor device a diffusion mask is removed from the surface of the semi-conductor body after a diffusion step and a surface layer of the body then removed before the growth of an epitaxial layer. Removal of the surface layer is necessary since the high temperatures used in the diffusion process give rise to a high dislocation density which makes the surface unsuitable as a substrate for good epitaxial growth. In the manufacture of silicon devices, silicon dioxide may be used as the diffusion mask. This is removed by a selective etch and semi-conductor material then removed by oxidation of the surface and further selective etching. With germanium and gallium arsenide, which are not easily oxidizable, direct removal of semi-conductor is effected by chemical or electrolytic etching. A process is described in which a silicon dioxide mask is formed on a psilicon substrate by a process involving dry oxidation, " wet " oxidation, and then dry oxidation, the oxide layer being apertured in the usual way. The exposed semiconductor is then slightly recessed, by etching, to provide a visual mark for orientating further masks in later processing and an n + zone formed by arsenic diffusion from silicon-arsenic powder. The silicon dioxide is etched off, the surface re-oxidized, and the new oxide also etched off. An n type layer is then grown epitaxially over the whole surface and the structure subjected to further diffusions to make a transistor.

公开(公告)号：CA960943A

公开(公告)日：1975-01-14

申请号：CA139469

申请日：1972-04-12

Applicant: IBM

Inventor： BOSS DAVID W ,  SPIRO ANDREA

IPC: H01L21/00 ,  H01L21/22

公开(公告)号：GB1287797A

公开(公告)日：1972-09-06

申请号：GB5416269

申请日：1969-11-05

Applicant: IBM

Inventor： SPIRO ANDREA ,  WHITE WILLIAM HENRY JR

IPC: H01L21/673 ,  C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  C30B31/00 ,  C30B31/14 ,  C30B35/00 ,  E04B9/20 ,  F27D3/12 ,  H01L21/205 ,  H01L21/22 ,  H01L31/10

Abstract: 1287797 Minature furnace carriers INTERNATIONAL BUSINESS MACHINES CORP 5 Nov 1969 [8 Nov 1968] 54162/69 Heading F4B [Also in Division H1] A carrier of suscepter material, e.g. graphite, supporting a substrate 25 during heat treatment in a reaction chamber 10 comprises a boat 20 formed with circular pockets 30 each having a peripheral shoulder 34 supporting said substrate and spaced from the floor 36 by a distance “T where T is the thickness of a semi-conductor wafer before treatment, Additional support for the wafer may be provided by a central core (38, Fig. 6). The reaction chamber comprises a quartz tube 12 surrounded by a high frequency heating coil 14 and having a conduit 18 introducing reactants fron gaseous sources 20a, 20b, and 20c. Heat is induced in both the boat and the substrate and radiation and conduction from the former equalizes the heating effect on the substrate.