公开(公告)号：SG100646A1

公开(公告)日：2003-12-26

申请号：SG200101710

申请日：2001-03-17

Applicant: IBM

Inventor： JEFFREY SCOTT BROWN ,  STEPHEN SCOTT FURKAY ,  ROBERT J GAUTHIER JR ,  DALE WARNER MARTIN ,  JAMES ALBERT SLINKMAN

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L29/10 ,  H01L29/167

Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.