公开(公告)号：SG100658A1

公开(公告)日：2003-12-26

申请号：SG200101933

申请日：2001-03-26

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  JOHN J ELLIS-MONAGHAN ,  TOSHIHARU FURUKAWA ,  GLENN R MILLER ,  JAMES ALBERT SLINKMAN ,  JEFFERY D GILBERT

IPC: H01L21/22 ,  C21D1/04 ,  H01L21/225 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324 ,  H01L21/326 ,  H01L21/00

Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.

公开(公告)号：SG100646A1

公开(公告)日：2003-12-26

申请号：SG200101710

申请日：2001-03-17

Applicant: IBM

Inventor： JEFFREY SCOTT BROWN ,  STEPHEN SCOTT FURKAY ,  ROBERT J GAUTHIER JR ,  DALE WARNER MARTIN ,  JAMES ALBERT SLINKMAN

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L29/10 ,  H01L29/167

Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.

公开(公告)号：SG96265A1

公开(公告)日：2003-05-23

申请号：SG200107623

申请日：2001-12-06

Applicant: IBM

Inventor： ARNE W BALLANTINE ,  JEFFREY SCOTT BROWN ,  JEFFREY D GILBERT ,  JAMES J QUINLIVAN ,  JAMES ALBERT SLINKMAN ,  ANTHONY C SPERANZA

IPC: H01L21/76 ,  H01L21/316 ,  H01L21/762 ,  H01L21/31

Abstract: A structure comprising a trench having a liner with rounded corners in the top and bottom of the trench is obtained by rapid thermal oxidation.