Abstract:
A thin-film transistor structure enabling a large display screen for high-definition display without causing any signal delay, a method for manufacturing a thin-film transistor structure, and a display device having the thin-film transistor structure. The thin-film transistor structure is so constructed that on a substrate (100) an insulating polymer film (101) having at least a trench (109) formed therein is formed, and the trench (109) formed in the insulating polymer film (101) houses a gate wiring (110) formed of a plurality of conductive layers. Further provided are a method for manufacturing the thin-film transistor structure having the aforementioned construction, and a display device including a TFT array having the thin-film transistor of that construction.
Abstract:
PROBLEM TO BE SOLVED: To reduce blurred picture in animated picture display and to obtain a satisfactory picture quality free from ghost. SOLUTION: This liquid crystal display device is provided with a control means which, in one period in a cycle of displaying one picture, controls a gate line driving means 2 so as to select a gate line for each of the first and the second pixel array for the purpose of displaying a picture on a liquid crystal panel; which controls the first and the second data line driving means 4a, 4b so that a picture signal for showing a picture is supplied to the first and the second data line group; which, in a separate period different from one in the same cycle as the one period, controls the gate line driving means 2 so as to select the gate line once more for each of the first and the second pixel array; and which controls the first and the second data line driving means 4a, 4b so that a non-picture signal having a prescribed electric potential and different from the picture signal is supplied to the first and the second data line group.
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor bonding device capable of alleviating stress and performing solder bump connection of a thin silicon chip to a substrate.SOLUTION: In solder bump connection between a contact on a silicon chip having a thickness of 50 μm or less and a plurality of contacts on a substrate, a tool head to which a PGS (Pyrolytic Graphite Sheet) having a thickness of 75-125 μm is adhered is used to form an electrical mechanical bonding by heating and melting and gradual heating based on forced convection of air.
Abstract:
PROBLEM TO BE SOLVED: To shift an OCB cell from a spray orientation state to a bend orientation state in a short time by applying a voltage which is higher than an electric field needed to continue bend orientation between a display electrode (pixel electrode) and a common electrode. SOLUTION: When the power source is turned on, a power-on reset signal is outputted for t1 seconds, and a gate pulse which is about 20-20V similar to an ordinary gate pulse, but has a period much wider than that in ordinary gate timing is outputted to a gate line in the t1 seconds. The gate-on time of this driving method is set long to several msec - several sec. Consequently, the bend orientation as a nucleus is formed between the gate electrode and common electrode. Further, the whole pixel shifts to the bend orientation with the electric field applied between the display electrode and common electrode. As a higher and higher voltage is applied between the display electrode and common electrode, the shift to the bend orientation is faster and faster.
Abstract:
PROBLEM TO BE SOLVED: To provide alignment with high accuracy having affinity with processes of three-dimensional packaging.SOLUTION: In combination of a plurality of studs (40) for regulating relative motions of a plurality of silicon chips in a lateral direction when solder bumps melt between the plurality of silicon chips, according to pitches of a plurality of solder bumps (10) to be arranged between the plurality of silicon chips, positions in the lateral direction are determined by using the positions of the solder bumps in the lateral direction as reference, and the plurality of studs (40) are provided at one silicon chip and the other silicon chip so that motions are relatively regulated when the plurality of silicon chips relatively move in the lateral direction, and positions between the plurality of solder bumps in the lateral direction set for each of the plurality of silicon chips are aligned (in a height direction).
Abstract:
PURPOSE: To observe a magnetic field in the vicinity of the surface of a sample in scanning tunnel michroscopic mode by providing means for extracting the specific frequency component of a tunneling current generated through interaction of the magnetic field and magnetic moment. CONSTITUTION: The magnetic field observing system comprises a cantilever 16, a chip 12 supported on a cantilever 16 and having a magnetic moment at least at the forward end thereof, and means for applying a voltage between the chip 12 and the surface of a sample. The system further comprises means for keeping a distance between the chip 12 and the surface of a sample at a level permitting a tunnel current flow, and means for extracting a specific frequency component of a tunnel current generated through interaction of a magnetic field connected electrically with the chip 12 and the magnetic moment. While keeping the distance between the chip 12 and the surface of the sample at a level permitting a tunnel current flow, a magnetic field alternating at a specific frequency is generated and the chip 12 is oscillated through interaction of the magnetic moment and the magnetic field. Finaly, the specific frequency component of the tunnel current is extracted.
Abstract:
PROBLEM TO BE SOLVED: To realize high-precision alignment expected between a plurality of chips or between a substrate and chips.SOLUTION: A combination of a plurality of studs is created for regulating relative movement of a plurality of chips in a lateral direction in the case where a solder bump is melted between the plurality of chips. For each of the plurality of chips, the combination of the plurality of studs having a predetermined width is created at a position where any solder bump is defined as a reference in the arrangement of a plurality of solder bumps disposed between the plurality of chips in accordance with a pitch of the plurality of solder bumps in such a manner that the plurality of solder bumps set to each of the plurality of chips are aligned within a predetermined range by regulating the relative movement of the plurality of chips even in the case where the plurality of chips are moved relatively to each other by melting of the plurality of solder bumps.
Abstract:
PROBLEM TO BE SOLVED: To provide an optical element and a color display device by which the performance of luminance and a viewing angle are improved and the performance of chromaticity also can be improved by performing the correction of the viewing angle and the emphasis of front luminance or the emphasis of a degree of diffusion. SOLUTION: The optical element which is a film-like optical element for correcting the angle of light to a prescribed direction is constituted of two materials 20, 21 between which a difference of refractive indexes is at least 0.1. One material 20 constitutes a plurality of light guides causing total reflection on a boundary with the other adjacent material 21, these light guides 22 are formed so as not to be arrayed at equal intervals or so as to have respectively different cross-sectional areas and the ratio of the width or diameter of an incident part of each light guide to the film thickness of the optical element 15 is at least 1:10. COPYRIGHT: (C)2005,JPO&NCIPI