公开(公告)号：JPH0558651B2

公开(公告)日：1993-08-27

申请号：JP17927287

申请日：1987-07-20

Applicant: IBM

Inventor： BURNS FRANCIS CHARLES ,  DREYFUS RUSSEL WARREN ,  SUSKO JOHN RICHARD

IPC: H01L21/302 ,  C23F1/12 ,  C23F4/02 ,  H01L21/3065

Abstract: The method is used for etching a layer of a first material superposed on a second material, which comprises: (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product; (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region; (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas; (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence. The apparatus used for the etching a layer of a first material superposed on a second material, comprises: (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas; (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas; (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products; (d) detecting means for detecting fluorescence; (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence. e

公开(公告)号：JPS63116431A

公开(公告)日：1988-05-20

申请号：JP17927287

申请日：1987-07-20

Applicant: IBM

Inventor： BURNS FRANCIS CHARLES ,  DREYFUS RUSSEL WARREN ,  SUSKO JOHN RICHARD

IPC: H01L21/302 ,  C23F1/12 ,  C23F4/02 ,  H01L21/3065

Abstract: The method is used for etching a layer of a first material superposed on a second material, which comprises: (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product; (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region; (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas; (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence. The apparatus used for the etching a layer of a first material superposed on a second material, comprises: (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas; (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas; (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products; (d) detecting means for detecting fluorescence; (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence. e

公开(公告)号：DE3767436D1

公开(公告)日：1991-02-21

申请号：DE3767436

申请日：1987-10-13

Applicant: IBM

Inventor： BURNS FRANCIS CHARLES ,  DREYFUS RUSSEL WARREN ,  SUSKO JOHN RICHARD

IPC: H01L21/302 ,  C23F1/12 ,  C23F4/02 ,  H01L21/3065 ,  C23F1/02 ,  C23F1/08 ,  C23F4/00

Abstract: The method is used for etching a layer of a first material superposed on a second material, which comprises: (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product; (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region; (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas; (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence. The apparatus used for the etching a layer of a first material superposed on a second material, comprises: (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas; (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas; (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products; (d) detecting means for detecting fluorescence; (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence. e

公开(公告)号：DE3472333D1

公开(公告)日：1988-07-28

申请号：DE3472333

申请日：1984-08-08

Applicant: IBM

Inventor： ECONOMY JAMES ,  SUSKO JOHN RICHARD ,  VOLKSEN WILLI ,  WHEATER ROBIN ANNE

IPC: C08G63/00 ,  C08G63/60 ,  C09J167/00 ,  C09K3/10 ,  H01B3/42 ,  H01L23/10 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28

Abstract: Integrated circuit module wherein the cap is sealed to the substrate with a liquid crystalline polyester melt containing about 25 to about 100 mole percent of recurring Units I and about 75 to 0 mole percent of recurring Units II whereinandwherein each R and R, is arylene or cycloalkylene or alkylene or alkylidene.