中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.019 seconds)

    1.
    发明专利
    失效

    公开(公告)号：JPH0558651B2

    公开(公告)日：1993-08-27

    申请号：JP17927287

    申请日：1987-07-20

    Applicant: IBM

    Inventor： BURNS FRANCIS CHARLES ,  DREYFUS RUSSEL WARREN ,  SUSKO JOHN RICHARD

    IPC: H01L21/302 ,  C23F1/12 ,  C23F4/02 ,  H01L21/3065

    Abstract: The method is used for etching a layer of a first material superposed on a second material, which comprises: (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product; (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region; (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas; (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence. The apparatus used for the etching a layer of a first material superposed on a second material, comprises: (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas; (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas; (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products; (d) detecting means for detecting fluorescence; (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence. e

    ETCHING
    2.
    发明专利
    ETCHING 失效

    公开(公告)号：JPS63116431A

    公开(公告)日：1988-05-20

    申请号：JP17927287

    申请日：1987-07-20

    Applicant: IBM

    Inventor： BURNS FRANCIS CHARLES ,  DREYFUS RUSSEL WARREN ,  SUSKO JOHN RICHARD

    IPC: H01L21/302 ,  C23F1/12 ,  C23F4/02 ,  H01L21/3065

    Abstract: The method is used for etching a layer of a first material superposed on a second material, which comprises: (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product; (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region; (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas; (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence. The apparatus used for the etching a layer of a first material superposed on a second material, comprises: (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas; (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas; (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products; (d) detecting means for detecting fluorescence; (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence. e

    3.
    发明专利
    未知

    公开(公告)号：DE3751134D1

    公开(公告)日：1995-04-13

    申请号：DE3751134

    申请日：1987-10-23

    Applicant: IBM

    Inventor： BURNS FRANCIS CHARLES ,  CARDEN GARY RICHARD

    IPC: C23F4/00 ,  B23K26/06 ,  C23F4/04 ,  H01L21/268 ,  H01L21/48 ,  H01L21/60 ,  H05K3/00 ,  G03F1/00 ,  C23F4/02 ,  H01L21/306

    Abstract: A method for performing differential etching of material by using electromagnetic radiation. Material having two predetermined regions is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that both of the predetermined regions of the material are etched simultaneously and each of the predetermined regions is etched at a rate independent of the etching rate of the other of the predetermined regions. In an alternate embodiment, a substance having at least two materials is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that the time required to etch one of the materials is substantially equal to the time required to etch any selected combination of the materials remaining. A mask (16) with a properly patterned reflective coating (14) can be used to selectively vary the energy intensity of predetermined areas within the beam of electromagnetic radiation.

    4.
    发明专利
    未知

    公开(公告)号：DE3767436D1

    公开(公告)日：1991-02-21

    申请号：DE3767436

    申请日：1987-10-13

    Applicant: IBM

    Inventor： BURNS FRANCIS CHARLES ,  DREYFUS RUSSEL WARREN ,  SUSKO JOHN RICHARD

    IPC: H01L21/302 ,  C23F1/12 ,  C23F4/02 ,  H01L21/3065 ,  C23F1/02 ,  C23F1/08 ,  C23F4/00

    Abstract: The method is used for etching a layer of a first material superposed on a second material, which comprises: (a) mounting the sample in a reaction chamber containing a gas reacting with said first material forming a first solid reaction product; (b) applying a beam of laser radiation to a region of the first material to vaporize said product there with the first material being exposed which again forms said product in said region; (c) performing step (b) repeatedly until the first material in said region has been removed and a second solid reaction product is formed from the second material and the gas; (d) directing a beam of narrow band light into the vaporized reaction products with said light inducing said vaporized second reaction product to fluoresce light. The application of the pulsed laser can be terminated in response to the detection of the fluorescence. The apparatus used for the etching a layer of a first material superposed on a second material, comprises: (a) a reaction chamber within which the said sample substrate is mounted, and which is equiped with means to introduce a reactive gas; (b) etching laser means for patternwise vaporizing the reaction product of the first material and the gas; (c) probe beam means for directing a beam of narrow band light into the vaporized reaction products; (d) detecting means for detecting fluorescence; (e) means to terminate said pulsing of said etching laser in response to detection of said fluorescence. e

    5.
    发明专利
    未知

    公开(公告)号：DE3751134T2

    公开(公告)日：1995-09-14

    申请号：DE3751134

    申请日：1987-10-23

    Applicant: IBM

    Inventor： BURNS FRANCIS CHARLES ,  CARDEN GARY RICHARD

    IPC: C23F4/00 ,  B23K26/06 ,  C23F4/04 ,  H01L21/268 ,  H01L21/48 ,  H01L21/60 ,  H05K3/00 ,  G03F1/00 ,  C23F4/02 ,  H01L21/306

    Abstract: A method for performing differential etching of material by using electromagnetic radiation. Material having two predetermined regions is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that both of the predetermined regions of the material are etched simultaneously and each of the predetermined regions is etched at a rate independent of the etching rate of the other of the predetermined regions. In an alternate embodiment, a substance having at least two materials is provided. A beam of electromagnetic radiation is generated. The energy intensity of predetermined areas within the beam of electromagnetic radiation is selectively varied so that the time required to etch one of the materials is substantially equal to the time required to etch any selected combination of the materials remaining. A mask (16) with a properly patterned reflective coating (14) can be used to selectively vary the energy intensity of predetermined areas within the beam of electromagnetic radiation.

Patent Agency Ranking