公开(公告)号：JPH07254653A

公开(公告)日：1995-10-03

申请号：JP11110493

申请日：1993-04-14

Applicant: IBM

Inventor： TAKI NASERU BUCHI ,  RUISU RUUCHIEN SHIYU ,  MAAKU EDOUIN JIYOSUTO ,  SEIKI OGURA ,  RONARUDO NOOMAN SHIYURUTSU

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/08 ,  H01L27/12 ,  H01L29/732 ,  H01L29/786

Abstract: PURPOSE: To form a thin silicon region for a CMOS and a thick silicon region for a bipolar region into an epitaxial device layer. CONSTITUTION: A set of oxide islands 20 is formed onto a first wafer. An epitaxial layer 30 is grown from a bipolar silicon region, and the oxide islands 20 are coated. The process is used as a step, when the bottom section of a bipolar region is formed. The first wafer is inverted, and an oxide is coupled with a second wafer 60 by the new grown epitaxial layer 30 in the lower sections of the oxide islands 20. Consequently, a new top face is formed in a high-quality epitaxial layer. Excess silicon is removed from the new top face, the top face is polished by using a nitride polishing stop layer until thickness on the oxide islands 20 reaches 1000 (Å), and the thick epitaxial silicon layer of 1 (μm) is left in the bipolar region, while the epitaxial silicon layer of thickness 1000 (Å) is left in a CMOS region.