公开(公告)号：JPH07210832A

公开(公告)日：1995-08-11

申请号：JP26941494

申请日：1994-11-02

Applicant: IBM

Inventor： KEBIN ROBAATO KOFUI ,  ROBAATO EDOWAADO FUONTANA ,  JIEEMUSU KENTO HAWAADO ,  TOTSUDO RANIAA HIRUTON ,  MAIKERU ANDORIYUU PAAKAA ,  CHIN FUA TSUAN

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10

Abstract: PURPOSE: To eliminate the need for an additional structure means for fixing the magnetization direction in a ferromagnetic layer by forming an low-field MR magnetic sensor based on the GMR effect of a multilayered structure. CONSTITUTION: The multilayered magnetic structure 30 includes two layers 31, 33 consisting of a magnetic material. These layers are separated by a nonmagnetic layer 35. The nonmagnetic material layer 35 is an electrically conductive material or a sufficiently thin insulating material layer which enables the conduction of the conduction electrons between the magnetic material layers by a tunnel effect. The magnetic layers 31, 33 consist of ferromagnetic materials, such as NiFe ('Permalloy (R)'), which are Ni, Fe, Co or their alloy. The layers of the magnetic materials and the nonmagnetic materials are alternately formed by sputtering, etc., and the thicknesses of the individual layers are controlled by a quartz monitor, etc. The length of the magnetic structure 30 is several μm and is adequately about