公开(公告)号：JPH02149556A

公开(公告)日：1990-06-08

申请号：JP26926889

申请日：1989-10-18

Applicant: IBM

Inventor： REIMONDO UIRIAMU ANJIERO ,  JIEFURII DONARUDO JIEROOMU ,  JIYOZEFU POORU KUTSUINSUKII ,  UIRIAMU HAUERU RORENSU ,  SOKURATEIIZU PIITAA PAPASU ,  ROOGAN ROIDO SHINPUSON

IPC: C07C381/12 ,  C08G59/00 ,  C08G59/18 ,  C08G59/68 ,  G03F7/029

公开(公告)号：JPH02259762A

公开(公告)日：1990-10-22

申请号：JP30943489

申请日：1989-11-30

Applicant: IBM

Inventor： RORENSU MAAKU BURAUN ,  JIEFURII DONARUDO JIEROOMU ,  JIYOZEFU POORU KUTSUINSUKII ,  UIRIAMU HAUERU RORENSU

IPC: C08F2/50 ,  C08G59/00 ,  C08G59/18 ,  G03F7/038 ,  G03F7/20 ,  H05K3/00 ,  H05K3/28

Abstract: PURPOSE: To enable free radical polymn. without using an oxygen barrier sheet and to enhance the resolution of an image by using a specified photoresist. CONSTITUTION: A curable cationic photoresist is formed on a substrate and imagewisely exposed with laser beams from Ar ion laser, etc., the exposed part of the photoresist is cured by cationic polymn. and the photoresist is patterned by development. The photoresist preferably contains about 69-79wt.% octafunctional bisphenol A epoxy novolak (e.g. a compd. represented by formula I), about 15-17wt.% bifunctional alicyclic epoxy (e.g. a compd. represented by formula II), about 4-6wt.% trifunctional epoxy (e.g. a compd. represented by formula III), about 2.9-6.9wt.% photosensitizer (e.g. a compd. represented by formula IV) and 0 to about 0.15wt.% surfactant (e.g. a desired fluorine-contg. surfactant).