公开(公告)号：GB2600316B

公开(公告)日：2023-05-24

申请号：GB202200795

申请日：2020-06-15

Applicant: IBM

Inventor： RUILONG XIE ,  CARL RADENS ,  KANGGUO CHENG ,  VEERARAGHAVAN BASKER

IPC: H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786 ,  H10B10/00

Abstract: A method of forming a semiconductor structure includes forming fins over a substrate, forming a shallow trench isolation region over the substrate surrounding the fins, and forming nanosheet stacks providing channels for nanosheet field-effect transistors. The method also includes forming a channel protecting liner over a portion of sidewalls and a top surface of a first nanosheet stack formed over a first fin, the channel protecting liner being further formed over a portion of the shallow trench isolation region extending from the sidewalls of the first nanosheet stack toward a second nanosheet stack formed over a second fin. The method further includes forming gate stacks surrounding exposed portions of the nanosheet stacks, forming an asymmetric self-aligned gate isolation structure over the channel protecting liner, and forming a symmetric self-aligned gate isolation structure over a portion of the shallow trench isolation region between a third fin and a fourth fin.

公开(公告)号：GB2600316A

公开(公告)日：2022-04-27

申请号：GB202200795

申请日：2020-06-15

Applicant: IBM

Inventor： RUILONG XIE ,  CARL RADENS ,  KANGGUO CHENG ,  VEERARAGHAVAN BASKER

IPC: H01L29/00 ,  H10B10/00

Abstract: A method of forming a semiconductor structure includes forming fins over a substrate, forming a shallow trench isolation region over the substrate surrounding the fins, and forming nanosheet stacks providing channels for nanosheet field-effect transistors. The method also includes forming a channel protecting liner over a portion of sidewalls and a top surface of a first nanosheet stack formed over a first fin, the channel protecting liner being further formed over a portion of the shallow trench isolation region extending from the sidewalls of the first nanosheet stack toward a second nanosheet stack formed over a second fin. The method further includes forming gate stacks surrounding exposed portions of the nanosheet stacks, forming an asymmetric self-aligned gate isolation structure over the channel protecting liner, and forming a symmetric self-aligned gate isolation structure over a portion of the shallow trench isolation region between a third fin and a fourth fin.