公开(公告)号：JPH10223377A

公开(公告)日：1998-08-21

申请号：JP1932398

申请日：1998-01-30

Applicant: IBM

Inventor： GUHA SUPRATIK ,  HAIGHT RICHARD ALAN ,  KARASINSKI JOSEPH M ,  TROUTMAN RONALD R

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22 ,  H05B33/26

Abstract: PROBLEM TO BE SOLVED: To provide an organic light emitting diode having a transparent cathode structure. SOLUTION: This structure has a metal thin film 64 having a low work function, and this metal thin film 64 is brought into direct contact with an electron transport layer 62 and is covered with a layer 66 of a broad band gap semiconductor. Since calcium has relatively high optical energy transmittance, and has the ability to form an electron injection contact having excellent properties for an organic substance, the metal forming the metal thin film 64 is preferably made of calcium. In addition, ZnSe, ZnS or their alloys exhibit excellent conductivity in a direction parallel to emission light, and has the ability to protect a low work function metal and an organic film in a lower layer, and is transparent for the emission light. Therefore, a semiconductor forming the semiconductor layer 66 is preferably selected from a group consisting of ZnSe, ZnS or their alloys.

公开(公告)号：CA1209280A

公开(公告)日：1986-08-05

申请号：CA485177

申请日：1985-06-25

Applicant: IBM

Inventor： KINNEY WAYNE I ,  KOBURGER CHARLES W III ,  LASKY JEROME B ,  NESBIT LARRY A ,  TROUTMAN RONALD R ,  WHITE FRANCIS R

IPC: H01L27/08 ,  H01L21/033 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06

Abstract: PROCESS OF MAKING DUAL WELL CMOS SEMICONDUCTOR STRUCTURE WITH ALIGNED FIELD-DOPINGS USING SINGLE MASKING STEP A process for making a CMOS dual-well semiconductor structure with field isolation doping, wherein only a single lithographic masking step is required for providing self-alignment both of the wells to each other and also of the field isolation doping regions to the wells. The lithographic masking step forms a well mask and defines an oxidation barrier which acts as: an implant mask (absorber) during the ion-implantation of a field dopant of one type; an oxidation barrier over one well during the oxidation of the opposite-type well to form over the one well a sacrificial oxide layer which forms the alignment marks for subsequent formation of the field-doping regions; and a dopant-transmitter during the ion-implanation of an opposite-type field dopant which is simultaneously absorbed by the sacrificial oxide. As a result, there are formed field-doped oxide layers self-aligned to the wells so that, with a subsequent masking step, oxide field isolations are defined over the doped oxide layers. A heat cycle is then used to drive the field dopants into the corresponding field-doping regions.