公开(公告)号：JP2001308345A

公开(公告)日：2001-11-02

申请号：JP2001090670

申请日：2001-03-27

Applicant: IBM

Inventor： PAUL STEVEN ANDREE ,  COLGAN EVAN GEORGE ,  JOHN C FLAKE ,  PETER FRYER ,  WILLIAM GRAHAM ,  EUGENE O'SULLIVAN

IPC: H01L21/28 ,  H01L21/225 ,  H01L21/336 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for simplifying formation of an ohmic contact for a thin film transistor. SOLUTION: The method for forming an ohmic contact for a semiconductor device includes a step of forming a metal-contained layer containing integrally formed dopants. The metal-contained layer is patterned to form a constituent element of the semiconductor device, and a semiconductor layer is deposited in contact with the metal-contained layer. The semiconductor device is annealed so that dopants are outwardly diffused from the metal-contained layer within the semiconductor layer to thereby form an ohmic contact.