公开(公告)号：JPH10107066A

公开(公告)日：1998-04-24

申请号：JP25532197

申请日：1997-09-19

Applicant: IBM

Inventor： DANIEL GEORGE BERGER ,  GUY PAUL BREULETTE ,  DAVID HERSH DANOVICI ,  PETER ALFRED GRUBER ,  BRUCE LEE HUMPHREY ,  MICHAEL LIER ,  WILLIAM THOMAS MOTSCHIF ,  CARLOS JUAN SAMBUSETTI

IPC: B23K35/26 ,  H01L21/60 ,  H05K3/34

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an interconnecting section on an electronic device. SOLUTION: The very small recessed sections of a molding tool 10 having the recessed sections are filled up with molten solder 22 by making the solder 22 to flow and the solder 22 is solidified. Then the tool 10 is aligned with a wafer 30 carrying chips to which solder bumps 40 having a high melting point are stuck. Consequently, each very small recessed section of the tool 10 is aligned with the solder bump 40 on each chip. After alignment, the solder in the recessed sections are transferred to the top sections of the solder bumps 40 by passing an aligned molding tool 10/wafer assembly 50 through a reflow furnace. Therefore, two-layer metallic composition bumps are formed of the two kinds of different solder alloys.

公开(公告)号：JPH10107064A

公开(公告)日：1998-04-24

申请号：JP20758997

申请日：1997-08-01

Applicant: IBM

Inventor： GUY PAUL BREULETTE ,  DAVID HIRSCH DANOVICI ,  MICHAEL LEAR ,  WILLIAM THOMAS MOTSCHIF ,  JUDITH MARIE RORUDAN ,  CARLOS JUAN SAMBUSETTI ,  RABI F SARAFU

IPC: H01L21/60 ,  H01L23/556 ,  H05K1/18 ,  H05K3/24 ,  H05K3/32 ,  H05K3/34

Abstract: PROBLEM TO BE SOLVED: To lessen the amount of emission of αparticles without having a defect in the mutual connection device of a lead base by a method wherein the mutual connection device is constituted into such a structure that an electronic element is positioned on the upper surface of the device and conductive regions on the upper surface and the device comprises a semiconductor chip having conductive bumps separated from each other. SOLUTION: A mutual connection device 34, which is used to an electronic element and has little amount of emission of αparticles, is contrived to be obtained. That is, the device 34 comprises a semiconductor chip 12, which is positioned on the upper surface of the device 34 and conductive regions on the upper surface and has electrically resistive bumps separated from each other. The bumps are formed of a polymer and a composite material containing metal particles. As an embodiment, the chip 12 and a substrate 10 are bonded together at the stage of a treatment. The bumps 26 are formed on the IC chip 12 and the substrate 10 is a bare pad having terminal metallizations 18 consisting of a gold layer. Composite pads consisting of dry bumps and the like are pressed at a junction temperature exceeding the softening temperature of a polymer binder. After the pressure in the pressing and the junction temperature reach the final pressure and temperature, the chip and the substrate are bonded together through mutual connection parts 34.