公开(公告)号：JPH1065070A

公开(公告)日：1998-03-06

申请号：JP17667997

申请日：1997-07-02

Applicant: IBM

Inventor： MICHAEL ANTHONY GEINZU ,  JIYAINARU ABEDEIN MORA ,  STEVEN PAUL OSUTORANDAA ,  JUDITH MARIE RORUDAN ,  GEORGE JOHN SAKUSENMEIYAA ,  GEORGE FREDRIC WOLKER

IPC: H01L23/32 ,  H01L21/60 ,  H01L21/68 ,  H01R4/58

Abstract: PROBLEM TO BE SOLVED: To obtain a low-impedance and re-workable electric interconnection for electric connections without solder and dielectric adhesive film having conductive clusters for sealing capsules. SOLUTION: Recesses 12 are formed into a metal layer 10 for forming clusters 20. A photomask 16 is adhered to the top face 14 of the metal layer 10 and positioned at regions 12 to form openings 18. The interconnection clusters 20 are electroplated to form tree-like metal filaments with the clusters 10 branched. The photomask 16 is removed to leave the clusters 20 defined by the metal filaments. A dielectric adhesive layer 22 is potted round metal clusters to form a dielectric adhesive film 22 having a pattern of clusters 20 for conductive interconnection. Using this film 22, a semiconductor chip or wafer can be interconnected or capsules can be sealed.

公开(公告)号：JPH10107064A

公开(公告)日：1998-04-24

申请号：JP20758997

申请日：1997-08-01

Applicant: IBM

Inventor： GUY PAUL BREULETTE ,  DAVID HIRSCH DANOVICI ,  MICHAEL LEAR ,  WILLIAM THOMAS MOTSCHIF ,  JUDITH MARIE RORUDAN ,  CARLOS JUAN SAMBUSETTI ,  RABI F SARAFU

IPC: H01L21/60 ,  H01L23/556 ,  H05K1/18 ,  H05K3/24 ,  H05K3/32 ,  H05K3/34

Abstract: PROBLEM TO BE SOLVED: To lessen the amount of emission of αparticles without having a defect in the mutual connection device of a lead base by a method wherein the mutual connection device is constituted into such a structure that an electronic element is positioned on the upper surface of the device and conductive regions on the upper surface and the device comprises a semiconductor chip having conductive bumps separated from each other. SOLUTION: A mutual connection device 34, which is used to an electronic element and has little amount of emission of αparticles, is contrived to be obtained. That is, the device 34 comprises a semiconductor chip 12, which is positioned on the upper surface of the device 34 and conductive regions on the upper surface and has electrically resistive bumps separated from each other. The bumps are formed of a polymer and a composite material containing metal particles. As an embodiment, the chip 12 and a substrate 10 are bonded together at the stage of a treatment. The bumps 26 are formed on the IC chip 12 and the substrate 10 is a bare pad having terminal metallizations 18 consisting of a gold layer. Composite pads consisting of dry bumps and the like are pressed at a junction temperature exceeding the softening temperature of a polymer binder. After the pressure in the pressing and the junction temperature reach the final pressure and temperature, the chip and the substrate are bonded together through mutual connection parts 34.

公开(公告)号：JP2000101221A

公开(公告)日：2000-04-07

申请号：JP13474499

申请日：1999-05-14

Applicant: IBM

Inventor： RABI F SARAFU ,  JUDITH MARIE RORUDAN ,  MICHAEL ANTHONY GAINS ,  RICHARD BENTON BOSS ,  STEPHEN PAUL OSTLUNDER ,  EMMANUEL I COOPER ,  CARLOS J SANBUSECCHI

IPC: H05K3/40 ,  C09J9/02 ,  H01B1/22 ,  H01L21/60 ,  H05K1/09 ,  H05K3/32

Abstract: PROBLEM TO BE SOLVED: To provide a conductive paste which can be melted again and does not contain a flux material corrosive to electric products by allowing a composite material to contain a conductive metallic powder at a specific ratio to the total volume thereof. SOLUTION: The dissolving temperature of a thermoplastic polymer applicable to a conductive paste 12 is preferably at least about 200 deg.C. The melting point of a second elemental metallic powder of the conductive paste 12 is preferably at least about 200 deg.C. A third element of the conductive paste 12 is a polar organic solvent having a boiling point of about 130-300 deg.C. A conductive composite material comprises a metal containing no oxide, which is preferably at least 30 vol.% to its total volume. The conductive composite material is formed by heating the conductive paste. To form conductive mutual connection, a paste is injected and a pressure is applied at a higher temperature than the glass transition temperature of the thermoplastic polymer.