公开(公告)号：GB2607792B

公开(公告)日：2024-12-18

申请号：GB202212342

申请日：2021-01-05

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  OLEG GLUSCHENKOV ,  YASIR SULEHRIA ,  DEVIKA SIL

IPC: H10N50/01

Abstract: Large grain metal bitlines are formed above magnetic tunnel junction pillars used as MRAM bits without materially affecting the magnetic properties of the magnetic tunnel junctions. A copper or copper alloy bitline having relatively small grains is formed over the pillars. Laser annealing is employed to melt the bitline. Subsequent cooling and recrystallization results in a reduction of the number of grain boundaries in the bitline and a reduction in bitline effective resistivity. Multiple melt/cool cycles may be used. Bitline grains are vertically aligned with the pillars in a resulting structure.

公开(公告)号：GB2607792A

公开(公告)日：2022-12-14

申请号：GB202212342

申请日：2021-01-05

Applicant: IBM

Inventor： YASIR SULEHRIA ,  ALEXANDER REZNICEK ,  OLEG GLUSCHENKOV ,  DEVIKA SIL

IPC: H01L43/08

Abstract: Large grain metal bitlines are formed above magnetic tunnel junction pillars used as MRAM bits without materially affecting the magnetic properties of the magnetic tunnel junctions. A copper or copper alloy bitline having relatively small grains is formed over the pillars. Laser annealing is employed to melt the bitline. Subsequent cooling and recrystallization results in a reduction of the number of grain boundaries in the bitline and a reduction in bitline effective resistivity. Multiple melt/cool cycles may be used. Bitline grains are vertically aligned with the pillars in a resulting structure.

公开(公告)号：GB2603684A

公开(公告)日：2022-08-10

申请号：GB202204972

申请日：2020-09-22

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  DEVIKA SIL ,  OLEG GLUSCHENKOV ,  YASIR SULEHRIA

IPC: H01L43/02 ,  H01L43/08

Abstract: A hardened gap fill dielectric material that has improved chemical and physical properties is formed laterally adjacent to a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode structure of a memory structure. The harden gap fill dielectric material can be formed by introducing, via ion implantation, a bond breaking additive into an as deposited gap fill dielectric material layer and thereafter curing the gap fill dielectric material layer containing the bond breaking additive. The curing includes UV curing alone, or UV curing in combination with laser annealing. The curing employed in the present application does not negatively impact the MTJ pillar or top electrode structure.