公开(公告)号：CA2757477A1

公开(公告)日：2010-12-29

申请号：CA2757477

申请日：2010-04-12

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  YU GUOHAN ,  SUN JONATHAN ZANHONG ,  WORLEDGE DANIEL CHRISTOPHER

IPC: G11C11/00

Abstract: Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.