公开(公告)号：DE2966686D1

公开(公告)日：1984-03-22

申请号：DE2966686

申请日：1979-11-27

Applicant: IBM

Inventor： CHIU GEORGE TEIN-CHU ,  KITCHER JAMES ROBERT ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/31 ,  C23F1/00

Abstract: Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO2, and Si3N4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl4, water, and a material selected from the group consisting of the noble gases and oxygen.

公开(公告)号：DE3267357D1

公开(公告)日：1985-12-19

申请号：DE3267357

申请日：1982-03-12

Applicant: IBM

Inventor： FRIESER RUDOLF GRUENSPAN ,  MA WILLIAM HSIOH-LIEN ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/08 ,  H01J37/32 ,  C23C14/00

Abstract: A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode (10) has a quartz plate (12) with a series of recesses (14) having disks (16) therein of Si, C, Al, W, Cr, Ti or Mo, in particular the same material as the object to be etched, and a ring (18) of preferably that same material around the outer edge of the plate (12). In one embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.

公开(公告)号：IT1165430B

公开(公告)日：1987-04-22

申请号：IT2812679

申请日：1979-12-18

Applicant: IBM

Inventor： CHIU GEORGE TEIN-CHU ,  KITCHER JAMES ROBERT ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L

Abstract: Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO2, and Si3N4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl4, water, and a material selected from the group consisting of the noble gases and oxygen.