公开(公告)号：DE2861377D1

公开(公告)日：1982-01-28

申请号：DE2861377

申请日：1978-11-16

Applicant: IBM

Inventor： FRIESER RUDOLF GRUENSPAN ,  REEBER MORTON

IPC: H01L23/44 ,  H01L21/304 ,  H01L21/306 ,  H01L21/322 ,  H01L23/427 ,  H05K7/20 ,  H01L21/302 ,  H01L23/36 ,  H01L23/42

公开(公告)号：DE2558913A1

公开(公告)日：1976-10-07

申请号：DE2558913

申请日：1975-12-29

Applicant: IBM

Inventor： FEDROWITZ WALTER ,  FRIESER RUDOLF GRUENSPAN

IPC: C23C22/60 ,  C23C22/64 ,  C23C22/68 ,  G03F1/00 ,  G03F1/08 ,  C23F7/02

Abstract: A method for forming an oxidized chromium film on the surface of chromium metal in a controlled manner which involves the use of a permanganate solution. The chromium metal film is first subjected to a basic hydrogen peroxide solution. The chromium surface is then removed from the hydrogen peroxide solution and immersed in an aqueous permanganate solution maintained at a temperature less than about 100 DEG C. for a time preferably within 1 to 5 minutes. At this time the chromium film has been oxidized to the desired thickness depending upon the time and temperature at which the surface has been subjected to the solutions. The surface is removed from the permanganate solution and dried. Should additional thickness of chromium oxide films be desired, the surface is intermittently subjected to the permanganate solution and dried to build up the desired thickness of chromium oxide.

公开(公告)号：DE3267357D1

公开(公告)日：1985-12-19

申请号：DE3267357

申请日：1982-03-12

Applicant: IBM

Inventor： FRIESER RUDOLF GRUENSPAN ,  MA WILLIAM HSIOH-LIEN ,  OZOLS GUNARS MIERVALDIS ,  ZINGERMAN BRYANT NILS

IPC: C23F4/00 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/08 ,  H01J37/32 ,  C23C14/00

Abstract: A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode (10) has a quartz plate (12) with a series of recesses (14) having disks (16) therein of Si, C, Al, W, Cr, Ti or Mo, in particular the same material as the object to be etched, and a ring (18) of preferably that same material around the outer edge of the plate (12). In one embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.