公开(公告)号：DE102004043855B4

公开(公告)日：2011-04-21

申请号：DE102004043855

申请日：2004-09-10

Applicant: IBM ,  QIMONDA AG

Inventor： STOJAKOVIC GEORGE ,  RANADE RAJIV M ,  KASKO IHAR ,  NUETZEL JOACHIM ,  MILKOVE KEITH RAYMOND ,  ALLEN RUSSEL D ,  LEE YOUNG HOON

IPC: H01L43/08 ,  G11C11/22 ,  H01L21/00 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L31/119 ,  H01L43/12

公开(公告)号：WO2004040602A2

公开(公告)日：2004-05-13

申请号：PCT/EP0312017

申请日：2003-10-29

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： COSTRINI GREG ,  HUMMEL JOHN P ,  STOJAKOVIC GEORGE ,  LOW KIA-SENG

IPC: G11C11/16 ,  H01F41/30 ,  H01L43/12 ,  H01F41/00

CPC classification number: G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

Abstract: The invention relates to magnetic switching devices, and more particularly to a method for patterning metal stack layers of a magnetic switching device utilizing TiN and W as a bilayer metal hardmask (7, 8) patterned in two lithography steps with concommitant hardmask open etch and resist strip steps. The hardmask materials TiN and W are chosen so that the mask open etch chemistry is designed with good selectivity, thereby enabling patterning of the hardmask layers prior to etching of the metal stack layers.

Abstract translation: 本发明涉及磁性开关器件，更具体地说，涉及一种利用TiN和W作为双层金属硬掩模（7,8）图案化的磁性开关器件的金属堆叠层的方法，该双层金属硬掩模（7,8）在两个光刻步骤中图案化，并具有硬掩模开放蚀刻和抗蚀剂 剥离步骤。 选择硬掩模材料TiN和W，使得掩模开口蚀刻化学品被设计成具有良好的选择性，从而能够在刻蚀金属叠层之前对硬掩模层进行图案化。

公开(公告)号：DE102004043855A1

公开(公告)日：2005-05-19

申请号：DE102004043855

申请日：2004-09-10

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： STOJAKOVIC GEORGE ,  RANADE RAJIV M ,  KASKO IHAR ,  NUETZEL JOACHIM ,  MILKOVE KEITH RAYMOND ,  ALLEN RUSSEL D ,  LEE YOUNG HOON

IPC: G11C11/22 ,  H01L21/00 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L31/119 ,  H01L43/08 ,  H01L43/12

Abstract: A method of fabricating a magnetic tunnel junction (MTJ) device is provided. A patterned hard mask is oxidized to form a surface oxide thereon. An MTJ stack is etched in alignment with the patterned hard mask after the oxidizing of the patterned hard mask. Preferably, the MTJ stack etch recipe includes chlorine and oxygen. Etch selectivity between the hard mask and the MTJ stack is improved.