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    PATTERNING METAL STACK LAYERS OF MAGNETIC SWITCHING DEVICE, UTILIZING A BILAYER METAL HARDMASK
    1.
    发明申请
    PATTERNING METAL STACK LAYERS OF MAGNETIC SWITCHING DEVICE, UTILIZING A BILAYER METAL HARDMASK 审中-公开
    磁性切换装置的金属堆叠层，利用双层金属硬质合金

    公开(公告)号：WO2004040602A2

    公开(公告)日：2004-05-13

    申请号：PCT/EP0312017

    申请日：2003-10-29

    Applicant: INFINEON TECHNOLOGIES AG ,  IBM

    Inventor： COSTRINI GREG ,  HUMMEL JOHN P ,  STOJAKOVIC GEORGE ,  LOW KIA-SENG

    IPC: G11C11/16 ,  H01F41/30 ,  H01L43/12 ,  H01F41/00

    CPC classification number: G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/12

    Abstract: The invention relates to magnetic switching devices, and more particularly to a method for patterning metal stack layers of a magnetic switching device utilizing TiN and W as a bilayer metal hardmask (7, 8) patterned in two lithography steps with concommitant hardmask open etch and resist strip steps. The hardmask materials TiN and W are chosen so that the mask open etch chemistry is designed with good selectivity, thereby enabling patterning of the hardmask layers prior to etching of the metal stack layers.

    Abstract translation: 本发明涉及磁性开关器件，更具体地说，涉及一种利用TiN和W作为双层金属硬掩模（7,8）图案化的磁性开关器件的金属堆叠层的方法，该双层金属硬掩模（7,8）在两个光刻步骤中图案化，并具有硬掩模开放蚀刻和抗蚀剂 剥离步骤。 选择硬掩模材料TiN和W，使得掩模开口蚀刻化学品被设计成具有良好的选择性，从而能够在刻蚀金属叠层之前对硬掩模层进行图案化。

    3.
    发明专利
    未知

    公开(公告)号：DE60301344D1

    公开(公告)日：2005-09-22

    申请号：DE60301344

    申请日：2003-04-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LEUSCHNER RAINER ,  STOJAKOVIC GEORGE ,  NING J

    IPC: H01L27/105 ,  G11C11/16 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C11/15

    Abstract: A resistive memory device (110) and method of manufacturing thereof comprising a cap layer (140) and hard mask layer (142) disposed over magnetic stacks (114), wherein either the cap layer (140) or hard mask layer (142) comprise WN. A seed layer (136) disposed beneath the magnetic stacks (114) may also be comprised of WN, The use of the material WN improves etch process selectivity during the manufacturing process.

    5.
    发明专利
    未知

    公开(公告)号：DE10237140A1

    公开(公告)日：2003-04-17

    申请号：DE10237140

    申请日：2002-08-13

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： STOJAKOVIC GEORGE ,  LIPINSKI MATTHIAS

    IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/308

    Abstract: Disclosed is a method of tungsten-based hard mask etching of a wafer, comprising providing a patterned tungsten-based hard mask atop a metal-based surface of said wafer, etching through said pattern with a plasma etch that is selective for said metal-based surface with respect to tungsten, and executing a flash etch selective for tungsten, said etch of at least a minimum duration effective in removing substantially all defects caused by tungsten particulate contaminating said wafer. In another aspect of the first embodiment, said tungsten-based hard mask comprises a material selected from tungsten or an alloy thereof. In another aspect of the first embodiment, said metal based surface comprises a material selected from aluminum or an alloy thereof.

    6.
    发明专利
    未知

    公开(公告)号：DE60301344T2

    公开(公告)日：2006-06-08

    申请号：DE60301344

    申请日：2003-04-17

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LEUSCHNER RAINER ,  STOJAKOVIC GEORGE ,  NING J

    IPC: G11C11/15 ,  H01L27/105 ,  G11C11/16 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08

    Abstract: A resistive memory device (110) and method of manufacturing thereof comprising a cap layer (140) and hard mask layer (142) disposed over magnetic stacks (114), wherein either the cap layer (140) or hard mask layer (142) comprise WN. A seed layer (136) disposed beneath the magnetic stacks (114) may also be comprised of WN, The use of the material WN improves etch process selectivity during the manufacturing process.

    7.
    发明专利
    未知

    公开(公告)号：DE102004017526A1

    公开(公告)日：2004-11-25

    申请号：DE102004017526

    申请日：2004-04-08

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： LIPINSKI MATTHIAS ,  STOJAKOVIC GEORGE

    IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

    Abstract: A method and a system for performing a metal reactive ion etching (RIE) process is disclosed. The metal RIE process comprises at least three steps: a metal RIE step, a stripping step and a wet cleaning step. The metal RIE step and the stripping step are carried out in a main reactive chamber.

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