公开(公告)号：DE2460914A1

公开(公告)日：1976-06-24

申请号：DE2460914

申请日：1974-12-21

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  KORTH HANS DIPL PHYS

IPC: G03B27/32 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

公开(公告)号：DE2736319A1

公开(公告)日：1979-02-22

申请号：DE2736319

申请日：1977-08-12

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  JAERISCH WALTER DIPL PHYS DR

IPC: G02B6/42 ,  G02B21/08 ,  G02B21/06

Abstract: The homogenous illumination of object and image planes is accomplished by using an optical system consisting of two imaging elements. Radiation from this system is picked up by a pref. glass-fibre bunch. At its exit side there appears, for each direction of the radiation striking the entry face, a ring-shaped distribution of the brightness of the emergent light radiation. This is transmitted directly or via imaging elements to the object plane. A shutter arranged in the area of the optical system provides controlled attenuation of the light radiation.

公开(公告)号：DE2658399A1

公开(公告)日：1978-06-29

申请号：DE2658399

申请日：1976-12-23

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  HOLZINGER GERHARD DIPL PHYS DR ,  JAERISCH WALTER DIPL PHYS DR ,  SCHEUING CLAUS ING GRAD

IPC: G01B11/30 ,  G01J

Abstract: This invention relates to an interferometric process, and particularly to a process for examining the planarity of surfaces.

公开(公告)号：DE2264030A1

公开(公告)日：1974-07-18

申请号：DE2264030

申请日：1972-12-29

Applicant: IBM DEUTSCHLAND

Inventor： KORTH HANS ERDMANN DIPL PHYS ,  FROSCH ALBERT DIPL PHYS ,  SOLF BERNHARD DIPL ING ,  KALLMEYER MICHAEL

IPC: G01B11/30 ,  G01B11/24

公开(公告)号：DE2926738A1

公开(公告)日：1981-01-08

申请号：DE2926738

申请日：1979-07-03

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  WAGNER DIETMAR DIPL ING

IPC: G01B9/02 ,  G01B11/02 ,  G01B11/24

Abstract: The interferometric method of determining the shape and sign of irregularities or inclinations in a surface involves use of a measurement and a reference beam. The desired parameters are measured very accurately and rapidly and irrespective of all external influences. The results are evaluated quickly and with simple equipment. -The measurement or reference beam is polarised into two different components. One component is phase shifted by less than half a wavelength before combining it with the unpolarised beam. The two interference fields so produced are separated using polarising elements to produce two interference patterns. The two patterns are finally combined into a pattern of line pairs with relative positions defined by the phase difference impressed on the two components.

公开(公告)号：DE2411926A1

公开(公告)日：1975-09-25

申请号：DE2411926

申请日：1974-03-13

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  SCHMACKPFEFFER ARNO DIPL PHYS

IPC: G03F7/20 ,  G03F1/00

公开(公告)号：DE2360197A1

公开(公告)日：1975-06-05

申请号：DE2360197

申请日：1973-12-03

Applicant: IBM DEUTSCHLAND

Inventor： KORTH HANS-ERDMANN DIPL PHYS ,  FROSCH ALBERT DIPL PHYS

IPC: G02B26/10 ,  G02B21/00 ,  G02B27/40 ,  G02B27/42

公开(公告)号：DE2951938A1

公开(公告)日：1981-07-02

申请号：DE2951938

申请日：1979-12-22

Applicant: IBM DEUTSCHLAND

Inventor： SCHAEFER DIPL-MINERAL DR ,  FROSCH ALBERT DIPL PHYS

IPC: C25F3/14 ,  H01L21/3063 ,  C25F3/12 ,  H01L21/306

Abstract: Selective electrochemical etching equipment consists of a supply of current, a cathode, means for connecting the workpiece as anode and provision for covering the surface to be etched with electrolyte. The supply (7) and connections (5,6; 12,16,13,17) are arranged so that there are two potentials at the workpiece (1,10,20), one of which is at least as positive as and the other more positive than the cathode potential. The equipment is specified for use in etching semiconductor material, including intrinsic Si, p- and n-doped Si, Ge and GaAs. It is used in the determn. of depth of penetration and doping profiles and in the prodn. of oxide-filled insulating grooves and V-grooves for very dense packing of semiconductor elements. Planar surfaces, inclined at various angles to the original surface, can be produced and p- and n-doped material can be etched equally rapidly if suitable radiation is employed during etching.

公开(公告)号：DE2603688A1

公开(公告)日：1977-08-11

申请号：DE2603688

申请日：1976-01-31

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  MANNSDOERFER WALTER ,  SCHEUING CLAUS ING GRAD

IPC: F16F15/02 ,  F16F6/00 ,  F16F7/104 ,  F16F15/18

Abstract: This invention is directed to an arrangement for compensating and absorbing vibratory oscillations of a driven spring-mass system by means of an auxiliary spring mass system. The drive for a main spring-mass system is designed such that it is guided along the same axis as the main system and oscillates out of phase with the main system.

公开(公告)号：DE2439208A1

公开(公告)日：1976-03-11

申请号：DE2439208

申请日：1974-08-16

Applicant: IBM DEUTSCHLAND

Inventor： FROSCH ALBERT DIPL PHYS ,  SCHMACKPFEFFER ARNO DIPL PHYS

IPC: G02B27/00 ,  G03F7/20 ,  H01L21/027 ,  G03F1/00 ,  G03B27/16 ,  H01L21/312 ,  H01L21/47 ,  H05K3/00