公开(公告)号：EP2009135A4

公开(公告)日：2010-12-29

申请号：EP07708033

申请日：2007-02-05

Applicant: IMAI YOSHIO

Inventor： SAWABE ATSUHITO ,  MAEDA SHINTARO ,  NOGUCHI HITOSHI

IPC: C23C16/02 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

公开(公告)号：JP2007270272A

公开(公告)日：2007-10-18

申请号：JP2006097697

申请日：2006-03-31

Applicant: Imai Yoshio ,  今井 淑夫

Inventor： SAWABE ATSUHITO ,  MAEDA SHINTARO

IPC: C23C16/02 ,  C23C14/06 ,  C23C16/27 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

Abstract: PROBLEM TO BE SOLVED: To provide an epitaxial diamond film underlaying substrate and its manufacturing method in which a diamond of high quality having a large area of ≥1 inch (2.5 cm) in diameter on an iridium substrate can be subjected to the epitaxial growth by using the CVD method, and an epitaxial diamond film manufactured by the epitaxial diamond film underlaying substrate and its manufacturing method. SOLUTION: An iridium (Ir) film is deposited by the epitaxial growth by the vacuum vapor deposition method or the sputtering method on a substrate of a single crystal magnesium oxide (MgO) or a single crystal sapphire (α-Al 2 O 3 ). The bias nucleus generation of forming an epitaxial diamond nucleus is performed by exposing DC plasma containing ions to a surface of the film-deposited iridium (Ir) substrate. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种外延金刚石膜底层衬底及其制造方法，其中在铱衬底上具有直径≥1英寸（2.5cm）的大面积的高品质金刚石可以经受 通过使用CVD法的外延生长和由外延金刚石膜衬垫基板制造的外延金刚石膜及其制造方法。 解决方案：通过真空气相沉积法或溅射法将外延生长沉积在单晶氧化镁（MgO）或单晶蓝宝石（α-Al 2 0 3 ）。 通过将含有离子的等离子体等离子体暴露于膜沉积的铱（Ir）衬底的表面来进行形成外延金刚石核的偏置核生成。 版权所有（C）2008，JPO＆INPIT