公开(公告)号：WO2011064368A1

公开(公告)日：2011-06-03

申请号：PCT/EP2010/068423

申请日：2010-11-29

Applicant: IMEC ,  BAERT, Kris

Inventor： BAERT, Kris

IPC: H01L31/0224 ,  H01L31/042 ,  H01L31/048 ,  H01L31/05 ,  H01L31/068 ,  H01L27/142

CPC classification number: H01L31/0516 ,  H01L31/048 ,  H01L31/0747 ,  Y02E10/50

Abstract: A method for fabricating a photovoltaic module comprises: providing a plurality of photovoltaic substrates (11) having a front side; attaching the plurality of photovoltaic substrates (11) to a transparent carrier (20) with the front side of the photovoltaic substrates (11) facing the carrier (20); and rear side processing of the plurality of photovoltaic substrates (11) for forming photovoltaic cells (21), wherein rear side processing comprises a single metallization process for forming electrical contacts to n-type regions and to p-type regions at the rear side of the plurality of photovoltaic cells (21) and for interconnecting the photovoltaic cells (21) within the photovoltaic module. Corresponding photovoltaic modules are also provided.

Abstract translation: 一种制造光伏模块的方法包括：提供具有前侧的多个光伏基板（11）; 将多个光伏基板（11）附接到透明载体（20）上，其中光伏基板（11）的前侧面向载体（20）; 以及用于形成光伏电池（21）的多个光伏基板（11）的后侧处理，其中后侧处理包括用于形成与n型区域的电接触的单个金属化处理和在后侧的p型区域 多个光伏电池（21）并且用于互连光伏模块内的光伏电池（21）。 还提供了相应的光伏组件。

公开(公告)号：EP1269526A2

公开(公告)日：2003-01-02

申请号：EP01923913.6

申请日：2001-04-05

Applicant: Interuniversitair Micro-Elektronica Centrum (IMEC)

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

公开(公告)号：EP2507839B1

公开(公告)日：2018-04-04

申请号：EP10787731.8

申请日：2010-11-29

Applicant: IMEC VZW

Inventor： BAERT, Kris

IPC: H01L31/05

CPC classification number: H01L31/0516 ,  H01L31/048 ,  H01L31/0747 ,  Y02E10/50

Abstract: A method for fabricating a photovoltaic module is disclosed. In one aspect, the method includes: providing a plurality of photovoltaic substrates having a front side; attaching the plurality of photovoltaic substrates to a transparent carrier with the front side of the photovoltaic substrates facing the carrier; and rear side processing of the plurality of photovoltaic substrates for forming photovoltaic cells, wherein rear side processing includes a single metallization process for forming electrical contacts to n-type regions and to p-type regions at the rear side of the plurality of photovoltaic cells and for interconnecting the photovoltaic cells within the photovoltaic module.

公开(公告)号：EP1269526B1

公开(公告)日：2009-08-19

申请号：EP01923913.6

申请日：2001-04-05

Applicant: IMEC

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

公开(公告)号：EP2507839A1

公开(公告)日：2012-10-10

申请号：EP10787731.8

申请日：2010-11-29

Applicant: IMEC

Inventor： BAERT, Kris

IPC: H01L31/0224 ,  H01L31/042 ,  H01L31/048 ,  H01L31/05 ,  H01L31/068 ,  H01L27/142

CPC classification number: H01L31/0516 ,  H01L31/048 ,  H01L31/0747 ,  Y02E10/50

Abstract: A method for fabricating a photovoltaic module is disclosed. In one aspect, the method includes: providing a plurality of photovoltaic substrates having a front side; attaching the plurality of photovoltaic substrates to a transparent carrier with the front side of the photovoltaic substrates facing the carrier; and rear side processing of the plurality of photovoltaic substrates for forming photovoltaic cells, wherein rear side processing includes a single metallization process for forming electrical contacts to n-type regions and to p-type regions at the rear side of the plurality of photovoltaic cells and for interconnecting the photovoltaic cells within the photovoltaic module.

Abstract translation: 公开了一种制造光伏组件的方法。 一方面，该方法包括：提供具有前侧的多个光伏基板; 将所述多个光伏基板连接到透明载体上，其中所述光伏基板的前侧面向所述载体; 以及用于形成太阳能电池的多个光伏基板的背面处理，其中后侧处理包括用于形成与n型区域的电接触的单个金属化工艺和在多个光伏电池的后侧的p型区域，以及 用于互连光伏模块内的光伏电池。