公开(公告)号：WO2013030403A1

公开(公告)日：2013-03-07

申请号：PCT/EP2012/067084

申请日：2012-09-03

Applicant: IMEC ,  AMERICAN UNIVERSITY IN CAIRO ,  EL RIFA, Joumana ,  SEDKY, Sherif ,  WITVROUW, Ann

Inventor： EL RIFA, Joumana ,  SEDKY, Sherif ,  WITVROUW, Ann

IPC: H03K17/96

CPC classification number: H03K17/962

Abstract: A MEMS capacitive switch is disclosed, the switch comprises a bottom electrode, a movable top electrode positioned above the bottom electrode and separated there from by a cavity, further comprising a layer of an amorphous semiconductor material in between the top and the bottom electrode and attached to one of these 2 electrodes preventing ohmic contact between both electrodes when moving the top electrode.

Abstract translation: 公开了一种MEMS电容式开关，该开关包括底部电极，位于底部电极上方的可移动顶部电极，并且在其之间由空腔隔开，还包括位于顶部和底部电极之间的非晶半导体材料层， 到这两个电极之一，当移动顶部电极时，防止两个电极之间的欧姆接触。

公开(公告)号：EP1269526A2

公开(公告)日：2003-01-02

申请号：EP01923913.6

申请日：2001-04-05

Applicant: Interuniversitair Micro-Elektronica Centrum (IMEC)

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.

公开(公告)号：EP1269526B1

公开(公告)日：2009-08-19

申请号：EP01923913.6

申请日：2001-04-05

Applicant: IMEC

Inventor： SEDKY, Sherif ,  WITVROUW, Ann ,  BAERT, Kris ,  CAYMAX, Matty ,  RUSU, Cristina

IPC: H01L21/205 ,  B81B3/00

CPC classification number: C23C16/22 ,  B81C1/00365 ,  B81C2201/0164 ,  B81C2201/017 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/1812 ,  Y02E10/546

Abstract: Method and apparatus of to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers are used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1-x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters are used.