公开(公告)号：DE69941977D1

公开(公告)日：2010-03-18

申请号：DE69941977

申请日：1999-06-01

Applicant: IMEC ,  ST MICROELECTRONICS NV

Inventor： GROESENEKEN GUIDO ,  RUSS CHRISTIAN

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87

公开(公告)号：AT456861T

公开(公告)日：2010-02-15

申请号：AT99870110

申请日：1999-06-01

Applicant: IMEC ,  ST MICROELECTRONICS NV

Inventor： GROESENEKEN GUIDO ,  RUSS CHRISTIAN

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87

公开(公告)号：ES2150053T3

公开(公告)日：2000-11-16

申请号：ES96111221

申请日：1992-01-30

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: H01L21/8247 ,  G11C16/04 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/792 ,  G11C16/06

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved.

公开(公告)号：DE69231300D1

公开(公告)日：2000-08-31

申请号：DE69231300

申请日：1992-01-30

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: H01L21/8247 ,  G11C16/04 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/792 ,  G11C16/06

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved.

公开(公告)号：DK0501941T3

公开(公告)日：1997-04-01

申请号：DK92870016

申请日：1992-01-30

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: H01L21/8247 ,  G11C16/04 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/792

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved.

公开(公告)号：AT144651T

公开(公告)日：1996-11-15

申请号：AT92870016

申请日：1992-01-30

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: H01L21/8247 ,  G11C16/04 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/792

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved.

公开(公告)号：DE69619321T2

公开(公告)日：2002-10-10

申请号：DE69619321

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115 ,  G11C16/06

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.

公开(公告)号：AT195034T

公开(公告)日：2000-08-15

申请号：AT96111221

申请日：1992-01-30

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: H01L21/8247 ,  G11C16/04 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/792 ,  G11C16/06

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved.

公开(公告)号：ES2095453T3

公开(公告)日：1997-02-16

申请号：ES92870016

申请日：1992-01-30

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: H01L21/8247 ,  G11C16/04 ,  G11C16/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L29/788 ,  H01L29/792

Abstract: A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved.

公开(公告)号：DE69636178T2

公开(公告)日：2007-03-29

申请号：DE69636178

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C16/14 ,  G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.