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    Electronic circuit and method of manufacturing the same
    3.
    发明专利
    Electronic circuit and method of manufacturing the same 审中-公开
    电子电路及其制造方法

    公开(公告)号：JP2010067635A

    公开(公告)日：2010-03-25

    申请号：JP2008229949

    申请日：2008-09-08

    Applicant: Imec ,  アイメックImec

    Inventor： THIJS STEVEN ,  TREMOUILLES DAVID ERIC ,  RUSS CHRISTIAN

    IPC: H01L27/06 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/088 ,  H01L29/78 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To provide an electronic circuit capable of protecting a circuit device from an ESD, in a FinFET integrated circuit generated at an ESD power level with a low ESD damage. SOLUTION: An electronic circuit 400' includes: at least one field-effect transistor which is protected from an electrostatic discharge phenomenon; and at least one protected field-effect transistor 400a. A protection field-effect transistor 400b includes a crystal orientation different from that of the protected field-effect transistor 400a. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种能够在具有低ESD损伤的ESD功率电平下产生的FinFET集成电路中提供能够保护电路装置免受ESD的电子电路。 解决方案：电子电路400'包括：至少一个受到静电放电现象的场效晶体管; 和至少一个受保护的场效应晶体管400a。 保护场效应晶体管400b包括与受保护的场效应晶体管400a的晶体取向不同的晶体取向。 版权所有（C）2010，JPO＆INPIT

    4.
    发明专利
    未知

    公开(公告)号：DE102008045551A1

    公开(公告)日：2009-04-02

    申请号：DE102008045551

    申请日：2008-09-03

    Applicant: IMEC VZW ,  INFINEON TECHNOLOGIES AG

    Inventor： RUSS CHRISTIAN ,  THIJS STEVEN ,  TREMOUILLES DAVID

    IPC: H01L23/60 ,  H01L27/12

    Abstract: An electronic circuit includes at least one field effect transistor that is to be protected against electrostatic discharge events, and at least one protection field effect transistor. The protection field effect transistor has a crystal orientation that is different from a crystal orientation of the field effect transistor to be protected.

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