公开(公告)号：DE102008051403B4

公开(公告)日：2010-12-16

申请号：DE102008051403

申请日：2008-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/74 ,  H01L21/332 ,  H01L27/06

公开(公告)号：DE102008039743A1

公开(公告)日：2010-03-04

申请号：DE102008039743

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR ,  PFIRSCH FRANK

IPC: H01L29/74 ,  H01L25/11

Abstract: The thyristor (100) has a p-doped emitter (8), an n-doped base (7), a P-doped base (6) and an n-doped main emitter (5) arranged in a vertical direction (v) in a semiconductor body (1). An ignition stage structure is arranged between an ignition device (BOD) and the main emitter and comprises an ignition stage (AG3) with an n-doped ignition stage emitter (53). The ignition stage has a conductor structure (43) with conductor segments (M3), which are distanced from each other. The conductor segments electrically contact the n-doped ignition stage emitter and the P-doped base. An independent claim is also included for a switch arrangement including a control connecting device.

公开(公告)号：DE10047152B4

公开(公告)日：2006-07-06

申请号：DE10047152

申请日：2000-09-22

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PFIRSCH FRANK ,  SCHMIDT GERHARD ,  BARTHELMES REINER

IPC: H01L21/322 ,  H01L29/861 ,  H01L21/329 ,  H01L29/06 ,  H01L29/40 ,  H01L29/868

公开(公告)号：DE10047152A1

公开(公告)日：2002-04-25

申请号：DE10047152

申请日：2000-09-22

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PFIRSCH FRANK ,  SCHMIDT GERHARD ,  BARTHELMES REINER

IPC: H01L21/322 ,  H01L21/329 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/868

公开(公告)号：DE102008039743B4

公开(公告)日：2010-12-09

申请号：DE102008039743

申请日：2008-08-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR ,  PFIRSCH FRANK

IPC: H01L29/74 ,  H01L25/11 ,  H01L29/749 ,  H02M1/08

公开(公告)号：DE102008051403A1

公开(公告)日：2010-05-12

申请号：DE102008051403

申请日：2008-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/74 ,  H01L21/332 ,  H01L27/06

Abstract: The thyristor arrangement has a semiconductor body (1), where a p-dopped emitter (8) and n-dopped basis (7) are arranged in a vertical direction (v) between a back side (14) and a front side (13). An ignition area (ZB) is provided, where an ignition stage (AG1) has n-dopped ignition stage emitter (51). An electric coupling element is formed as polysilizium layer and is arranged on a semiconductor element, where a section (101) of a semiconductor element is a section of a p-doped basis (6) and is arranged in the lateral direction between the ignition area and the ignition stage. An independent claim is included for a method for operating a thyristor arrangement.

公开(公告)号：DE10330053A1

公开(公告)日：2005-02-10

申请号：DE10330053

申请日：2003-07-03

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： SOELKNER GERALD ,  BARTHELMES REINER ,  SCHULZE HANS-JOACHIM

IPC: H01L23/48 ,  H01L29/74

Abstract: Semiconductor component with pressure contact comprises semiconductor substrate (10) with connecting electrode (12) at one side (101) of substrate. On electrode is deposited plate-shaped, conductive round surround (16) with edge (16A).Round surround is fitted with compressible pressure plate (20). Round surround tapers towards its edge. Preferably round surround contains central section (161) and edge section (162). Deposition face of pressure plate on surround is smaller than that of surround on semiconductor. Independent claims are included for surround for pressure contact.