Abstract:
A master latch circuit (10) with signal level displacement for a flip-flop (1) clocked by a clock pulse signal (Clk), wherein the master latch circuit (10) comprises a signal delay circuit (13) which delays and inverts the clock pulse signal (ClK), resulting in a specific time delay (AT), and a circuit node (14) which, in a charging phase wherein the clock pulse signal (Clk) is logically low, is charged to an operational voltage (VB) and which, in an evaluation phase when the clock pulse signal (Clk) and delayed, inverted clock pulse signal (ClkDELAY) are logically high, is discharged according to a specific data signal (D), wherein the data signal controls only transistors of a single type (either only N-channel or only P-channel). The master latch circuit (10) has only one supply voltage .
Abstract:
The invention relates to an integrated electronic circuit, comprising a semiconductor substrate and at least two inductors. According to the invention, the integrated electronic circuit is characterised in that the inductors have axes extending essentially parallel to at least one structural plane of the semiconductor substrate.
Abstract:
A clock transistor and a second operating potential functioning as a circuit breaker, are mounted between the outlet of an NMOS logic circuit.
Abstract:
in order to determine the critical path of a circuit, firstly the paths, the mean path runtimes and the path runtime variations thereof are determined. Paths with similar statistical parameters are collated into path groups. A statistical group figure for each path group and a statistical total figure for all paths considered are than calculated. Finally the critical path is determined by means of a comparison of the group figures at or above a critical path runtime Tc taking into account the total figure.
Abstract:
A method of fabricating an integrated circuit including arranging a plurality of cells to form a desired floor plan of the integrated circuit, wherein each cell comprises at least one transistor, forming a plurality of circuit constituents from the plurality of cells of the floor plan, wherein each circuit constituent comprises at least one cell and belongs to one of a plurality circuit constituent types, and applying mechanical stress to channel regions of the at least one transistor of each cell based on the circuit constituent type of the circuit constituent to which the cell belongs.
Abstract:
A power consumption unit (31) drains current additionally, when a change in power consumption of a circuit block (15) arranged on a chip (14) occurs in the event of a load change. Independent claims are also included for the following: (1) voltage regulator; (2) voltage stabilizer; (3) digital circuit unit control method; and (4) digital circuit unit control apparatus.
Abstract:
The arrangement has a switching on-/ off device (14) for switching on/off of circuit blocks (12, 13), and a detector (16) detecting if a switched off circuit block is activated. A clock controller (15) controls a clock pulse for circuit blocks and interrupts the clock for the blocks for a preset period if the detector detects that the block is activated. The switching on-/off device switches the blocks during the period. An independent claim is also included for a method of activation of a circuit block in an electronic circuit.
Abstract:
Logic activation circuit for switching a logic circuit having at least one supply voltage line on or off, said logic activation circuit having: (a) at least one voltage supply switching device for connecting a supply voltage to a supply voltage line of the logic circuit in a manner dependent on a changeover control signal that is applied to a control terminal of the voltage supply switching device; and having (b) a charge equalization switching device which, in a manner dependent on a control switching pulse, connects the supply voltage line of the logic circuit to the control terminal of the voltage supply switching device for the duration of the control switching pulse so that charge equalization is effected between the supply voltage line and the control terminal of the voltage supply switching device in order to generate the changeover control signal.
Abstract:
The circuit comprises an address decoder (3) for contacting individual cells (2) via word (WL) and bit lines (BL), which has a word line driver (5) for each word line. The driver is coupled to first supply potential (VDD1) for wordline activation according to an output signal of the decoder. There is an output terminal for output signal, corresp. to memory cell content.The word line drivers are coupled to second supply potential (VDD2), higher than the first one. On connection to the higher potential, the drivers activate the respective word line, corresp. to decoder output signal, onto a second voltage level higher than the first one. Independent claims are included for read-out method from memory cells.