Abstract:
PROBLEM TO BE SOLVED: To improve circuit structure for reading and evaluating the memory state in a semiconductor memory cell. SOLUTION: A differential current evaluation circuit (SBS) is provided with input section resistance adjusting means (MIN, MINB) of a differential amplifier (DV) and a current evaluation circuit (SBS). These means (MIN, MINB) are connected to the output parts (outp, outn) and the input parts (inn, inp) of the differential amplifier (DV) and signal lines (BL, BLB), which are electrically connected also to the input parts (inn, inp) of the differential amplifier (DV). A sense amplifier circuit (LV) is provided with a circuit part (ST2). The differential current evaluation circuit (SBS) and the sense amplifier circuit (LV) are arranged in circuit structure for reading and evaluating the memory state of a semiconductor memory cell. A current evaluation circuit is activated, before a reading process and automatically inactivated, immediately after finishing the reading process by a circuit (STAD) for automatic inactivation. COPYRIGHT: (C)2004,JPO
Abstract:
A master latch circuit (10) with signal level displacement for a flip-flop (1) clocked by a clock pulse signal (Clk), wherein the master latch circuit (10) comprises a signal delay circuit (13) which delays and inverts the clock pulse signal (ClK), resulting in a specific time delay (AT), and a circuit node (14) which, in a charging phase wherein the clock pulse signal (Clk) is logically low, is charged to an operational voltage (VB) and which, in an evaluation phase when the clock pulse signal (Clk) and delayed, inverted clock pulse signal (ClkDELAY) are logically high, is discharged according to a specific data signal (D), wherein the data signal controls only transistors of a single type (either only N-channel or only P-channel). The master latch circuit (10) has only one supply voltage .
Abstract:
The flip-flop has a data input and a data output. A latch stage is provided for storing the state information if the flip-flop is switched on. A memory cell having a capacitive storage unit is provided for storing the state information if the flip-flop is switched off. The memory cell is configured for storing the state information if the flip-flop is isolated from a supply voltage when the flip-flop is switched off. Independent claims are also included for the following: (A) a circuit block comprising a monitor circuit for monitoring unloading condition of the capacity of a flip-flop (B) a method for refreshing stored state information in each memory cell of multiple flip-flops (C) a method for checking stored state information in the memory cells of multiple flip-flops (D) a method for storing stored state information in the memory cells of multiple flip-flops.
Abstract:
The data carrier is equipped with at least one coil (1) for a contactless reception of amplitude-modulated signals, a rectifier circuit (2) coupled with the coil, and a circuit arrangement (3) for processing and/or storing of data. A supply voltage regulation circuit (4) is connected in parallel with the circuit arrangement. A current measurement arrangement functioning as amplitude demodulator (SME) is arranged between the coil and the supply voltage regulation circuit. The current measurement arrangement is preferably provided by a resistance or a current mirror circuit arranged in the current path between the rectifier circuit and the supply voltage regulation circuit.
Abstract:
The invention relates to a device for cooling an integrated circuit of an electronic, preferably mobile, appliance. The device for cooling is provided with a cooling element. The integrated circuit is provided with areas, wherein the power is consumed in different manners. The inventive device is characterised in that said device is provided with at least two cooling element for selectively cooling a partial surface of the integrated circuit respectively. The temperature of heavily used or speed-determining areas of a circuit is thus specifically influenced. Different cooling elements can be controlled according to the temperature to be maintained or the current computing power of the area to be cooled respectively.
Abstract:
The data carrier is equipped with at least one coil (1) for a contactless reception of amplitude-modulated signals, a rectifier circuit (2) coupled with the coil, and a circuit arrangement (3) for processing and/or storing of data. A supply voltage regulation circuit (4) is connected in parallel with the circuit arrangement. A current measurement arrangement functioning as amplitude demodulator (SME) is arranged between the coil and the supply voltage regulation circuit. The current measurement arrangement is preferably provided by a resistance or a current mirror circuit arranged in the current path between the rectifier circuit and the supply voltage regulation circuit.
Abstract:
The arrangement has a switching on-/ off device (14) for switching on/off of circuit blocks (12, 13), and a detector (16) detecting if a switched off circuit block is activated. A clock controller (15) controls a clock pulse for circuit blocks and interrupts the clock for the blocks for a preset period if the detector detects that the block is activated. The switching on-/off device switches the blocks during the period. An independent claim is also included for a method of activation of a circuit block in an electronic circuit.
Abstract:
An intergrated circuit having a drive circuit is disclosed. One embodiment provides an intergrated memory circuit arrangement with a drive circuit for an EEPROM. In one embodiment, the drive circuit contains tunnel field effect transistors and can be produced in particular on a small chip area.
Abstract:
Logic activation circuit for switching a logic circuit having at least one supply voltage line on or off, said logic activation circuit having: (a) at least one voltage supply switching device for connecting a supply voltage to a supply voltage line of the logic circuit in a manner dependent on a changeover control signal that is applied to a control terminal of the voltage supply switching device; and having (b) a charge equalization switching device which, in a manner dependent on a control switching pulse, connects the supply voltage line of the logic circuit to the control terminal of the voltage supply switching device for the duration of the control switching pulse so that charge equalization is effected between the supply voltage line and the control terminal of the voltage supply switching device in order to generate the changeover control signal.
Abstract:
The memory has several memory cells (SZ1,SZ2), wherein one of the memory cells is read out selectively via a bit line (BL,BLB) and a read amplifier (SA). A regulating circuit (LC) controls the current (IB) of the bit line in dependence on a voltage change of the bit line caused by a leakage current (IL) and compensates the leakage current.