公开(公告)号：WO02054470A3

公开(公告)日：2003-01-16

申请号：PCT/DE0104590

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  RUF ALEXANDER ,  URBANSKY NORBERT ,  CLAUSSEN WILHELM ,  GAERTNER THOMAS ,  SCHMIDBAUER SVEN

Inventor： RUF ALEXANDER ,  URBANSKY NORBERT ,  CLAUSSEN WILHELM ,  GAERTNER THOMAS ,  SCHMIDBAUER SVEN

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/28518 ,  H01L21/76856

Abstract: The invention relates to a method for contacting a doping area (3) which is formed on the surface (2) of a substrate (1). According to the invention, an isolating layer (5) is applied to the surface of the substrate (2) and a contact hole (16) is formed in the isolating layer (5). Subsequently, a layer containing metal (6) is placed on the isolating layer (5) and the surface area (4) of the doping area (3) which is bared by means of a contact hole (16). A two-stepped temperature process then follows, whereby in the first step the layer containing metal (6) is reacted with the silicon of the doping area (3) in order to obtain a metal silicon layer (7), and subsequently in the second temperature step the remaining layer containing metal (6) is transformed into a layer (8) containing metal nitrides.

Abstract translation: 一个Doteirgebiet设置在基板（1）的基板（2）表面上（3）接触的过程中形成。 有被施加在基底表面（2）上的绝缘层（5）和形成在绝缘层中的接触孔（16）（5）。 随后，在绝缘层（5）和由所述接触孔露出（16）的表面积上的含金属层（6）（4）掺杂区的（3）沉积。 在随后的，两步热过程中的含有金属的层（6）与所述掺杂区（3）的一种金属硅化物层的硅（7）是第一verreagiert，然后在第二温度的步骤中，含有金属的层（6）的在含金属的氮化物的层的其余部分 （8）转换。

公开(公告)号：DE10058951A1

公开(公告)日：2002-06-20

申请号：DE10058951

申请日：2000-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TOEBBEN DIRK ,  CLAUSSEN WILHELM

IPC: G03F7/00 ,  G03F7/095 ,  G03F7/40 ,  G03F7/20

Abstract: Production of a lithography mask comprises preparing a substrate (1); forming a first lacquer layer (11) on the substrate; forming a second silylatable lacquer layer (12) on the first layer; structuring the layers to form a first silylated region (12'); forming a third lacquer layer on the first silylated region; structuring the third lacquer layer and re-silylating the exposed first regions to form second silylated regions; and removing the third lacquer layer and structuring the first lacquer layer using the silylated regions. Preferred Features: The first lacquer layer is made from a non-photoactive lacquer. The third lacquer layer is removed and the first lacquer layer structured by anisotropically etching. The third lacquer later is made from a photolacquer.

公开(公告)号：DE50112534D1

公开(公告)日：2007-07-05

申请号：DE50112534

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUF ALEXANDER ,  URBANSKY NORBERT ,  CLAUSSEN WILHELM ,  GAERTNER THOMAS ,  SCHMIDBAUER SVEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/768

Abstract: A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.