公开(公告)号：WO02054470A3

公开(公告)日：2003-01-16

申请号：PCT/DE0104590

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  RUF ALEXANDER ,  URBANSKY NORBERT ,  CLAUSSEN WILHELM ,  GAERTNER THOMAS ,  SCHMIDBAUER SVEN

Inventor： RUF ALEXANDER ,  URBANSKY NORBERT ,  CLAUSSEN WILHELM ,  GAERTNER THOMAS ,  SCHMIDBAUER SVEN

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/28

CPC classification number: H01L21/76843 ,  H01L21/28518 ,  H01L21/76856

Abstract: The invention relates to a method for contacting a doping area (3) which is formed on the surface (2) of a substrate (1). According to the invention, an isolating layer (5) is applied to the surface of the substrate (2) and a contact hole (16) is formed in the isolating layer (5). Subsequently, a layer containing metal (6) is placed on the isolating layer (5) and the surface area (4) of the doping area (3) which is bared by means of a contact hole (16). A two-stepped temperature process then follows, whereby in the first step the layer containing metal (6) is reacted with the silicon of the doping area (3) in order to obtain a metal silicon layer (7), and subsequently in the second temperature step the remaining layer containing metal (6) is transformed into a layer (8) containing metal nitrides.

Abstract translation: 一个Doteirgebiet设置在基板（1）的基板（2）表面上（3）接触的过程中形成。 有被施加在基底表面（2）上的绝缘层（5）和形成在绝缘层中的接触孔（16）（5）。 随后，在绝缘层（5）和由所述接触孔露出（16）的表面积上的含金属层（6）（4）掺杂区的（3）沉积。 在随后的，两步热过程中的含有金属的层（6）与所述掺杂区（3）的一种金属硅化物层的硅（7）是第一verreagiert，然后在第二温度的步骤中，含有金属的层（6）的在含金属的氮化物的层的其余部分 （8）转换。

公开(公告)号：WO0034991A3

公开(公告)日：2000-11-16

申请号：PCT/DE9903878

申请日：1999-12-03

Applicant: INFINEON TECHNOLOGIES AG ,  POMPL THOMAS ,  WURZER HELMUT ,  REBITZER WOLFGANG ,  GAERTNER THOMAS ,  KRAHL KERSTIN ,  WEGE STEPHAN ,  GEHRING OLIVER

Inventor： POMPL THOMAS ,  WURZER HELMUT ,  REBITZER WOLFGANG ,  GAERTNER THOMAS ,  KRAHL KERSTIN ,  WEGE STEPHAN ,  GEHRING OLIVER

IPC: C23C8/02 ,  C23C14/58 ,  C23C28/00 ,  H01L21/28 ,  H01L21/311

CPC classification number: C23C14/5853 ,  C23C8/02 ,  C23C28/00 ,  H01L21/28167 ,  H01L21/31116 ,  H01L29/511

Abstract: The invention relates to a method of producing a metal oxide film. The inventive method comprises the following steps: a) providing a barrier film, b) applying a metal film onto the barrier film, and c) thermally oxidizing the metal film in an oxygen atmosphere, thereby producing a metal oxide film (3').

Abstract translation: 根据本发明，提供了一种用于生产金属氧化物层的方法。 在这种情况下，本发明的方法包括以下步骤：a）阻挡层设置，b）中在阻挡层上，金属层被沉积​​，以及c）将金属层在氧气氛中进行热氧化，从而产生一个金属氧化物层（3“）。

公开(公告)号：DE50112534D1

公开(公告)日：2007-07-05

申请号：DE50112534

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： RUF ALEXANDER ,  URBANSKY NORBERT ,  CLAUSSEN WILHELM ,  GAERTNER THOMAS ,  SCHMIDBAUER SVEN

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/768

Abstract: A method makes contact with a doping region formed at a substrate surface of a substrate. An insulating layer is applied on the substrate surface and a contact hole is formed in the insulating layer. A metal-containing layer is subsequently deposited on the insulating layer and the surface region of the doping region that is uncovered by the contact hole. In a subsequent thermal process having two steps, first the metal-containing layer is reacted with the silicon of the doping region to form a metal silicide layer and then the rest of the metal-containing layer is converted into a metal-nitride-containing layer in a second thermal step.

公开(公告)号：DE10206374A1

公开(公告)日：2003-09-04

申请号：DE10206374

申请日：2002-02-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEIN VON KAMIENSKI ELARD ,  GAERTNER THOMAS ,  SCHULZE JOERG ,  CASPARY DIRK

IPC: H01L21/265 ,  H01L21/316 ,  H01L21/321 ,  H01L21/768 ,  H01L21/8246

Abstract: Production of planar NROM (nitrided read only memory) cells having gate electrodes, a gate oxide and bit lines comprises forming an oxide for insulating the bit lines and an oxide for forming the gate oxide whilst thermally oxidizing a semiconductor material. Nitrogen is implanted in the region of the bit lines before the oxide of the bit lines is formed in the semiconductor material so that an oxidation rate is adjusted. Preferred Features: Additional low voltage components are produced. Implantation of nitrogen in the region of the bit lines is carried out so that the oxidation rate is lower than the oxidation rate in the region of the components.

公开(公告)号：DE10133537C2

公开(公告)日：2003-07-17

申请号：DE10133537

申请日：2001-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ABDUL-HAK AYAD ,  GAERTNER THOMAS ,  SCHULZE JOERG

IPC: C30B33/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/469 ,  H01L23/58

Abstract: A process for producing a nitrided oxide layer on a silicon semiconductor substrate includes introducing a multiplicity of wafers into an atmospheric batch furnace, carrying out an oxidation step at a first predetermined temperature, carrying out a nitriding step at a second predetermined temperature, and carrying out a reoxidation step at a third predetermined temperature. The wafers are then cooled and removed from the atmospheric batch furnace.

公开(公告)号：DE10114027A1

公开(公告)日：2002-10-02

申请号：DE10114027

申请日：2001-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAERTNER THOMAS ,  SCHULZE JOERG

IPC: C30B33/00 ,  H01L21/322 ,  H01L21/324 ,  C30B29/06 ,  C30B33/02

Abstract: Treating silicon wafers comprises placing the wafers in an oven; raising the temperature to a first process temperature of at least 1000 deg C in an oxygen-free atmosphere; leaving at this process temperature for at least one hour to cure crystal defects; reducing to a second process temperature of below 1000 deg C; leaving at this temperature for a few minutes to form a pad oxide on both sides of the wafer; and reducing the temperature to the ambient temperature. Preferred Features: The temperature is raised in to the first process temperature at a rate of 5-20 deg C per minute. The residual oxygen content is adjusted to less than 1 ppm. The second process temperature is 800-900 deg C. The wafers have a diameter of 200-300 mm.

公开(公告)号：DE10029286C2

公开(公告)日：2003-10-02

申请号：DE10029286

申请日：2000-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAERTNER THOMAS ,  LAMPRECHT ALEXANDRA ,  OTTENWAELDER DIETMAR ,  SCHULZE JOERG

IPC: B05D1/00 ,  B05D3/04 ,  C23C16/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/469 ,  H01L21/66 ,  H01L21/762

Abstract: Nitrogen processes are monitored by; (i) providing a silicon surface; (ii) subjecting the silicon surface to a nitrogen process; (iii) producing an oxide layer on the silicon surface by thermal oxidation for a specified duration; and (iv) determining a thickness of the oxide layer as a measure for a quality of the nitrogen process.

公开(公告)号：DE19856084C2

公开(公告)日：2002-07-11

申请号：DE19856084

申请日：1998-12-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POMPL THOMAS ,  WURZER HELMUT ,  REBITZER WOLFGANG ,  GAERTNER THOMAS ,  GEHRING OLIVER ,  KRAHL KERSTIN ,  WEGE STEPHAN

IPC: C23C8/02 ,  C23C14/58 ,  C23C28/00 ,  H01L21/28 ,  H01L21/311 ,  C23C14/14 ,  C23F4/00

公开(公告)号：DE10029286A1

公开(公告)日：2002-04-18

申请号：DE10029286

申请日：2000-06-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GAERTNER THOMAS ,  LAMPRECHT ALEXANDRA ,  OTTENWAELDER DIETMAR ,  SCHULZE JOERG

IPC: B05D1/00 ,  B05D3/04 ,  C23C16/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/469 ,  H01L21/66 ,  H01L21/762

Abstract: Nitrogen processes are monitored by; (i) providing a silicon surface; (ii) subjecting the silicon surface to a nitrogen process; (iii) producing an oxide layer on the silicon surface by thermal oxidation for a specified duration; and (iv) determining a thickness of the oxide layer as a measure for a quality of the nitrogen process.

公开(公告)号：DE10133537A1

公开(公告)日：2003-01-30

申请号：DE10133537

申请日：2001-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ABDUL-HAK AYAD ,  GAERTNER THOMAS ,  SCHULZE JOERG

IPC: C30B33/00 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/469 ,  H01L23/58

Abstract: Production of a nitrided oxide layer on a silicon semiconductor substrate comprises inserting a number of wafers in an atmospheric batch oven; oxidizing at a first predetermined temperature (T1); nitriding at a second predetermined temperature (T2); re-oxidizing at a third predetermined temperature (T3); and cooling and removing the wafer from the batch oven. Preferred Features: The nitriding step is carried out at in an NH3 atmosphere and/or a NH3/N2 atmosphere at 850-950 deg C. Oxidation is carried out at 800-900 deg C. Re-oxidation is carried out at 900-1000 deg C. The first predetermined temperature is less than the second predetermined temperature and the second predetermined temperature is less than the third predetermined temperature. Cooling is carried out between the temperatures.