公开(公告)号：DE10340131B4

公开(公告)日：2005-12-01

申请号：DE10340131

申请日：2003-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WAHL UWE ,  WILLMEROTH ARMIN ,  CUADRON MIGUEL ,  AHLERS DIRK

IPC: H01L21/336 ,  H01L27/088 ,  H01L29/06 ,  H01L29/76 ,  H01L29/78

Abstract: The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones ( 6 ) in charge compensation cells ( 27 ) that are arranged vertically and doped complimentarily to the semiconductor chip volume ( 5 ) are arranged in the entire chip volume, the complimentarily doped zones ( 6 ) extending right into surface regions ( 11 ) of the semiconductor power elements ( 7 ) and not projecting into surface regions ( 12 ) of semiconductor surface elements ( 1 ).

公开(公告)号：DE10340131A1

公开(公告)日：2005-04-07

申请号：DE10340131

申请日：2003-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WAHL UWE ,  WILLMEROTH ARMIN ,  CUADRON MIGUEL ,  AHLERS DIRK

IPC: H01L21/336 ,  H01L27/088 ,  H01L29/06 ,  H01L29/76 ,  H01L29/78

Abstract: The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones ( 6 ) in charge compensation cells ( 27 ) that are arranged vertically and doped complimentarily to the semiconductor chip volume ( 5 ) are arranged in the entire chip volume, the complimentarily doped zones ( 6 ) extending right into surface regions ( 11 ) of the semiconductor power elements ( 7 ) and not projecting into surface regions ( 12 ) of semiconductor surface elements ( 1 ).