公开(公告)号：WO2005001923A3

公开(公告)日：2005-05-26

申请号：PCT/DE2004001245

申请日：2004-06-14

Applicant: INFINEON TECHNOLOGIES AG ,  HALIK MARCUS ,  SCHMID GUENTER ,  KLAUK HAGEN ,  EDER FLORIAN ,  ZSCHIESCHANG UTE

Inventor： HALIK MARCUS ,  SCHMID GUENTER ,  KLAUK HAGEN ,  EDER FLORIAN ,  ZSCHIESCHANG UTE

IPC: D21H19/24 ,  D21H19/72 ,  H01L51/05 ,  H01L51/40 ,  D21H17/34

CPC classification number: D21H19/24 ,  D21H19/72 ,  H01L51/0002 ,  H01L51/0545 ,  Y10T428/31993

Abstract: The invention relates to a solution for treating a rough surface, especially a paper, which is used as a supporting material for a semiconductor component. Said solution is characterized by at least one phenol-containing basic polymer and/or copolymer. The invention also relates to a method for treating said surface with a solution, and a semiconductor component that is provided with a substrate which has been treated with a solution according to the inventive method. The invention makes it possible to arrange semiconductor components on rough surfaces.

Abstract translation: 溶液和用于治疗粗糙表面和半导体器件的方法。 本发明涉及用于治疗的粗糙表面的，尤其是纸的溶液中，作为用于半导体器件的衬底，其特征在于至少含有苯酚的基础聚合物和/或共聚物。 本发明还涉及用溶液处理所述表面的方法，和具有根据所述方法用溶液处理过的衬底的半导体器件。 这使得有可能安排在粗糙表面上的半导体元件。

公开(公告)号：DE102004057234B4

公开(公告)日：2007-08-02

申请号：DE102004057234

申请日：2004-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EDER FLORIAN ,  ROHDE DIRK ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER

IPC: C23C14/50 ,  C23C16/458 ,  H01L21/687

公开(公告)号：DE102004057234A1

公开(公告)日：2006-06-08

申请号：DE102004057234

申请日：2004-11-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EDER FLORIAN ,  ROHDE DIRK ,  HALIK MARCUS ,  KLAUK HAGEN ,  SCHMID GUENTER

IPC: C23C14/50 ,  C23C16/458 ,  H01L21/68

Abstract: The holder has a substrate holding plate including upper and lower surfaces. An attachment unit is arranged on the substrate holding plate for attaching a substrate (5). A spring catching unit (11) is engaged at a counter plate (1) for attaching the holder at the counter plate such that the upper surface rests upon a lower surface of the counter plate in a flat manner. The holder plate corresponds to periphery of the counter plate. An independent claim is also included for a substrate holding device with a substrate holder.

公开(公告)号：DE102004026108A1

公开(公告)日：2005-12-22

申请号：DE102004026108

申请日：2004-05-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLAUK HAGEN ,  EDER FLORIAN ,  HALIK MARCUS ,  ZSCHIESCHANG UTE ,  BREDERLOW RALF ,  SCHMID GUENTER ,  KRAGLER KARL

IPC: H01L21/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/28 ,  H01L51/00

Abstract: A field effect transistor device (T) is constructed with a source (S), drain (D), intermediate channel (K) and insulated gate (G). A resistance (R) is constructed. This is in contact with the source, drain and/or gate. The resistor is made of 80%-100% of amorphous carbon as a layer or layered structure. Its thickness is preferably 10 nm to 100 nm and it is formed entirely or in part, using cathode beam atomization, chemical gas phase deposition or vaporization. An independent claim is included for the corresponding method of manufacture.

公开(公告)号：DE10329262B3

公开(公告)日：2004-12-16

申请号：DE10329262

申请日：2003-06-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HALIK MARCUS ,  SCHMID GUENTER ,  KLAUK HAGEN ,  EDER FLORIAN ,  ZSCHIESCHANG UTE

IPC: D21H19/24 ,  D21H19/72 ,  H01L51/05 ,  H01L51/40 ,  H01L21/50 ,  H01L51/20 ,  H01L51/30

Abstract: Coating a paper substrate with a polymer comprises contacting the surface with a solution of a phenol-functional (co)polymer. An independent claim is also included for a semiconductor component with a paper substrate coated as above.

公开(公告)号：DE102005009511B3

公开(公告)日：2006-12-14

申请号：DE102005009511

申请日：2005-02-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLAUK HAGEN ,  HALIK MARCUS ,  SCHMID GUENTER ,  EDER FLORIAN

IPC: H01L27/105 ,  G11C11/14 ,  H01L27/28 ,  H01L51/30

Abstract: The device has a ferroelectric layer (3) which comprises of an electrically non-conducting polymer (31) with ferroelectric nano particles (32) distributed in the polymer, where the nano particles are produced using sol-gel procedure. The non-conducting polymer is a conjugated polymer which is soluble in organic solvents. The switching units are implemented with organic semiconductors. An independent claim is also included for a method for production of a semiconductor memory device.

公开(公告)号：DE102005005937A1

公开(公告)日：2006-08-17

申请号：DE102005005937

申请日：2005-02-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLAUK HAGEN ,  EDER FLORIAN ,  HALIK MARCUS ,  ROHDE DIRK ,  SCHMID GUENTER

IPC: H01L51/40 ,  G03F7/00

Abstract: A method is provided for producing a mask arrangement that is used for additive forming of organic semiconductor material regions on a substrate. The mask arrangement is formed by applying a photocrosslinkable polymer material to a mask carrier region, exposing it in a controlled and selective and thereby patterned manner and subsequently developing it. The developing process facilitates the removal of polymer material regions that are not exposed, and have not been photocrosslinked, from surface regions of the mask carrier region such that the desired mask arrangement is produced.

公开(公告)号：DE102004061929A1

公开(公告)日：2006-07-06

申请号：DE102004061929

申请日：2004-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HALIK MARCUS ,  KLAUK HAGEN ,  EDER FLORIAN ,  SCHMID GUENTER ,  ROHDE DIRK

IPC: H01L51/40 ,  H01L51/30

Abstract: The method involves preparations of a basic material structure (100) with a surface area (100a), formation of a photo material area (80) with surface area (80a) such that a first area (100a1), which is to be covered, of the surface area of the basic material structure is uncovered with the organic semiconductor material area (50) from the photo material area. The second area (100a2), which is not to be covered, of the surface area of the basic material structure is covered or remain covered with organic semiconductor material area from the photo material area. The photo material area, which is formed uses a maximum layer thickness (dPh) for the photo material area, which exceeds the maximum layer thickness (dOrg) of the organic semiconductor material area. In the formation of the organic semiconductor material area and formation of the photo material area a transient area (100u) is formed from a first area of the surface area of the basic material structure to a second area of the surface area of the basic material structure with a progression of layer thickness to the maximum layer thickness for the photo material area. The organic semiconductor material (50') on the first area of the surface area of the basic material structure and the organic semiconductor material on the second area of the surface area of the basic material structure are connected with each other covered with organic semiconductor. An independent claim is also included for the method for manufacturing a monolith arrangement with an organic semiconductor materials area.

公开(公告)号：DE102004010094B3

公开(公告)日：2005-12-22

申请号：DE102004010094

申请日：2004-02-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HALIK MARCUS ,  EDER FLORIAN ,  KLAUK HAGEN ,  ZSCHIESCHANG UTE ,  SCHMID GUENTER

IPC: C23C16/00 ,  H01L21/31 ,  H01L51/30

Abstract: A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with C n H 2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.