公开(公告)号：DE602004003476T2

公开(公告)日：2007-09-20

申请号：DE602004003476

申请日：2004-02-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH HANS-JOACHIM ,  FELSNER PETRA ,  KALTALIOGLU ERDEM ,  KERST UWE ,  SCHAFBAUER THOMAS

IPC: H01G4/06 ,  H01G4/228 ,  H01G4/33 ,  H01G4/40 ,  H01L21/768 ,  H01L21/77 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

Abstract: In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.

公开(公告)号：DE602004003476D1

公开(公告)日：2007-01-11

申请号：DE602004003476

申请日：2004-02-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH HANS-JOACHIM ,  FELSNER PETRA ,  KALTALIOGLU ERDEM ,  KERST UWE ,  SCHAFBAUER THOMAS

IPC: H01G4/06 ,  H01G4/228 ,  H01G4/33 ,  H01G4/40 ,  H01L21/768 ,  H01L21/77 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

Abstract: In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.

公开(公告)号：AU2002250505A1

公开(公告)日：2003-10-20

申请号：AU2002250505

申请日：2002-04-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BARTH HANS-JOACHIM ,  FELSNER PETRA ,  FRIESE GERALD ,  KALTALIOGLU ERDEM

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/82 ,  H01L23/485 ,  H01L23/525 ,  H01L23/532