公开(公告)号：WO2004077492A3

公开(公告)日：2004-11-25

申请号：PCT/DE2004000370

申请日：2004-02-27

Applicant: INFINEON TECHNOLOGIES AG ,  FISCHER FRANK ,  KLEIN HORST ,  KRUG ERWIN ,  PFLAUM BERND

Inventor： FISCHER FRANK ,  KLEIN HORST ,  KRUG ERWIN ,  PFLAUM BERND

IPC: H03G3/00 ,  H03G3/30 ,  H04B7/005

CPC classification number: H03G3/001 ,  H03G3/3068

Abstract: The invention relates to a circuit consisting of two regulatable amplification devices (DA, AA), the signal output (2) of the first amplification device (DA) being connected to the signal input (4) of the second amplification device (AA), and the first amplification device (DA) comprising a digital input (3) for regulating the amplification thereof and the second amplification device (AA) comprising an input (5) for the same purpose. According to the invention, the input (5) for regulating the amplification of the second amplification device (AA) is connected to the input (3) for regulating the amplification of the first amplification device (DA) by a specific means, in such a way that a change in the amplification of the second amplification device (AA) in one direction is caused by a change in the amplification of the first amplification device (DA) in the opposite direction, by means of regulation, such that the entire amplification remains essentially the same.

Abstract translation: 两个可调放大设备（DA，AA），其中，所述信号输出端（2）连接至所述第一放大装置（DA）到所述第二放大装置（AA），其中，所述第一放大装置（DA）包括数字输入的信号输入端（4）的电路装置（3 ）用于控制其增益，并且第二放大装置（AA）具有用于控制其增益的输入（5）。 输入端（5），以获得所述第二放大装置（AA）的控制被连接到输入端（3），用于控制所述第一放大装置（DA）的通过的装置的增益，使得在所述第二放大装置（AA）的在一个方向上的增益中的变化 通过由控制引起的第一放大装置（DA）的增益改变以相反方向实现，使得总体增益保持基本相同。

公开(公告)号：DE59808630D1

公开(公告)日：2003-07-10

申请号：DE59808630

申请日：1998-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LANDWEHR GOTTFRIED ,  KEIM MARKUS ,  REUSCHER GUENTER ,  LITZ THOMAS ,  BARON THIERRY ,  FISCHER FRANK ,  LUGAUER HANS-JUERGEN

IPC: H01S5/042 ,  H01S5/30 ,  H01S5/32 ,  H01S5/343

Abstract: A semiconductor laser component includes a semiconductor body with an SCH configuration which is suitable for generating an electromagnetic radiation and in which an active layer sequence with a quantum well structure is provided between a first outer cover layer of a first conductivity type and a second outer cover layer of the first conductivity type. A first denatured transition layer of a second conductivity type and a second denatured transition layer the first conductivity type are provided between the active layer sequence and the second outer cover layer.

公开(公告)号：DE10308923A1

公开(公告)日：2004-09-16

申请号：DE10308923

申请日：2003-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KRUG ERWIN ,  PFLAUM BERND ,  FISCHER FRANK ,  KLEIN HORST

IPC: H03G3/00 ,  H03G3/30 ,  H03G1/04

Abstract: A circuit arrangement includes two adjustable amplification devices where the signal output of the first amplification device is connected to the signal input of the second amplification device. The first amplification device has a digital input for controlling its gain and the second amplification device has an input for controlling its gain. The input for gain control in the second amplification device is connected to the input for controlling the gain of the first amplification device via a means such that a change in the gain of the second amplification device in one direction is effected by a change in gain, brought about by means of the control, in the first amplification device in the opposite direction such that the total gain remains essentially the same.

公开(公告)号：DE502004010613D1

公开(公告)日：2010-02-25

申请号：DE502004010613

申请日：2004-02-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER FRANK ,  KLEIN HORST ,  KRUG ERWIN ,  PFLAUM BERND

IPC: H04B7/005 ,  H03G3/00 ,  H03G3/30

Abstract: A circuit arrangement includes two adjustable amplification devices where the signal output of the first amplification device is connected to the signal input of the second amplification device. The first amplification device has a digital input for controlling its gain and the second amplification device has an input for controlling its gain. The input for gain control in the second amplification device is connected to the input for controlling the gain of the first amplification device via a means such that a change in the gain of the second amplification device in one direction is effected by a change in gain, brought about by means of the control, in the first amplification device in the opposite direction such that the total gain remains essentially the same.

公开(公告)号：DE102006018921A1

公开(公告)日：2007-11-08

申请号：DE102006018921

申请日：2006-04-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHROEDER STEPHAN ,  SCHAFFROTH THILO ,  PROELL MANFRED ,  FISCHER FRANK

IPC: G11C29/08 ,  G11C11/406

Abstract: An integrated semiconductor memory with refreshing of memory cells includes a temperature sensor to detect a chip temperature of the integrated semiconductor memory, a connection to apply a command signal, a frequency generation unit to generate a frequency signal, and a memory cell to store a data item, the stored data item being refreshed at the frequency of the frequency signal. The frequency generation unit generates the frequency signal at a first frequency on the basis of a chip temperature detected by the temperature sensor when a first state of the command signal is applied and the frequency generation unit generates the frequency signal at a second frequency, which is changed in comparison with the first frequency, at the same chip temperature when a second state of the command signal is applied.

公开(公告)号：DE59807557D1

公开(公告)日：2003-04-24

申请号：DE59807557

申请日：1998-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LANDWEHR GOTTFRIED ,  KEIM MARKUS ,  REUSCHER GUENTER ,  LITZ THOMAS ,  BARON THIERRY ,  FISCHER FRANK ,  LUGAUER HANS-JUERGEN

IPC: H01L33/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S5/347

Abstract: An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.

公开(公告)号：DE59801130D1

公开(公告)日：2001-09-06

申请号：DE59801130

申请日：1998-05-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER FRANK ,  REUSCHER GUENTER ,  LITZ THOMAS ,  LANDWEHR GOTTFRIED

IPC: H01S5/10 ,  H01S5/323 ,  H01S5/183

Abstract: An Optoelectronic semiconductor component, in which an active zone is disposed above a semiconductor substrate, and which zone is disposed between at least one first resonator mirror layer and at least one second resonator mirror layer. The first and the second mirror layer each have a semiconductor material of a first conductivity type. At least one first heavily doped junction layer of the first conductivity type and at least one second heavily doped junction layer of a second conductivity type are disposed between the active zone and one of the two mirror layers in such a way that the second heavily doped, degenerate junction layer lies between the active zone and the first heavily doped, degenerate junction layer.