公开(公告)号：DE50109266D1

公开(公告)日：2006-05-11

申请号：DE50109266

申请日：2001-09-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FREITAG DR ,  LAMMERS STEFAN ,  GOGL DR ,  ROEHR DR

IPC: G11C11/14 ,  G11C11/16 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: The arrangement has memory cells in a field in at least one plane at intersection points between word or programming lines and bit lines. Providing programming currents to word and bit lines corresponding to a selected cell causes stray magnetic fields in adjacent cells. The method involves feeding a compensation current to the adjacent cell word, programming, bit or special line to produce a compensation magnetic field countering the stray field. The MRAM arrangement has memory cells (11-13) in a memory cell field in at least one plane at intersection points between word lines (WL1) or programming lines and bit lines (BL1-BL3). Providing programming currents to word and bit lines corresponding to a selected cell causes stray magnetic fields in adjacent cells. The method involves feeding a compensation current to the word line or programming line or bit line or a special line of the adjacent cell(s) to produce a compensation magnetic field countering the stray field.

公开(公告)号：DE50100269D1

公开(公告)日：2003-07-03

申请号：DE50100269

申请日：2001-08-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOEHM THOMAS ,  GOGL DR ,  FREITAG DR ,  LAMMERS STEFAN

IPC: G11C11/14 ,  G11C5/02 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: Single memory cell fields from memory arrays (A) and peripheral circuits (P) assigned to these are interlaced into each other so that utilizing free corner surfaces in a cross-shaped structure produces a high packing density for a module structure. Rows (1-3) in an MRAM module structure are offset to each other so that in row 2, for example, the peripheral circuits bordering on rows 1 and 3 fit in exactly to the corner surfaces of the memory cell fields in rows 1 and 3.