公开(公告)号：DE10328343A1

公开(公告)日：2005-01-20

申请号：DE10328343

申请日：2003-06-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SPERLICH HANS-PETER ,  HARTMANN STEPHAN

IPC: H01L21/316 ,  H01L21/762 ,  H01L21/8239

Abstract: Production of a semiconductor structure comprises forming a semiconductor substrate (1) with a trench (2), depositing germanium-containing silicate glass (10) having a melting temperature of 800-950[deg]C to fill the trench and cover the surrounding structure (5) forming a cavity (15) or seam in the trench, melting the silicate glass to remove the cavity or seam in the trench, and optionally back-polishing the silicate glass up to the upper side of the surrounding structure. An independent claim is also included for a semiconductor structure produced by the above process.

公开(公告)号：DE10328343B4

公开(公告)日：2007-05-03

申请号：DE10328343

申请日：2003-06-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SPERLICH HANS-PETER ,  HARTMANN STEPHAN

IPC: H01L21/8239 ,  H01L21/316 ,  H01L21/762

Abstract: Production of a semiconductor structure comprises forming a semiconductor substrate (1) with a trench (2), depositing germanium-containing silicate glass (10) having a melting temperature of 800-950[deg]C to fill the trench and cover the surrounding structure (5) forming a cavity (15) or seam in the trench, melting the silicate glass to remove the cavity or seam in the trench, and optionally back-polishing the silicate glass up to the upper side of the surrounding structure. An independent claim is also included for a semiconductor structure produced by the above process.

公开(公告)号：DE102004024886A1

公开(公告)日：2005-12-15

申请号：DE102004024886

申请日：2004-05-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTMANN STEPHAN ,  VOGT MIRKO ,  HELLER MARCEL ,  VOELKL LARS ,  SACHSE HERMANN

IPC: G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316

Abstract: Method for applying photoactive multilayer coatings (6) to substrates (3) for transfer of structures from a photomask into the substrate comprises applying a nitrogen-free dielectric anti-reflection layer (1) to the substrate. This consists of non-stoichiometric silicon oxide and has a surface (4) to which a photoactive resist layer (2) can be applied. An independent claim is included for multilayer coating systems as described.

公开(公告)号：DE102004008497A1

公开(公告)日：2005-09-08

申请号：DE102004008497

申请日：2004-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OFFENBERG DIRK ,  VOGT MIRKO ,  HARTMANN STEPHAN

IPC: G03F1/08 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242

Abstract: The present invention provides a fabrication method for a semiconductor structure in a substrate, the semiconductor structure having at least two regions that are to be patterned differently. A fabrication of a patterned first region in the substrate, so that the semiconductor structure has a non-patterned second region and the patterned first region, is followed by a deposition of a cover layer that grows over the patterned first region, so that the cover layer above the patterned first region forms a closure, which covers over the patterned first region. This is followed by a fabrication of the patterned second region, the patterned first region remaining protected at least by the closure of the cover layer. The final step effected is a removal of the cover layer above the semiconductor structure, which now has two differently patterned regions.