公开(公告)号：DE102004024886A1

公开(公告)日：2005-12-15

申请号：DE102004024886

申请日：2004-05-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTMANN STEPHAN ,  VOGT MIRKO ,  HELLER MARCEL ,  VOELKL LARS ,  SACHSE HERMANN

IPC: G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316

Abstract: Method for applying photoactive multilayer coatings (6) to substrates (3) for transfer of structures from a photomask into the substrate comprises applying a nitrogen-free dielectric anti-reflection layer (1) to the substrate. This consists of non-stoichiometric silicon oxide and has a surface (4) to which a photoactive resist layer (2) can be applied. An independent claim is included for multilayer coating systems as described.