公开(公告)号：DE102005018737A1

公开(公告)日：2006-10-26

申请号：DE102005018737

申请日：2005-04-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： VOELKEL LARS ,  BAUCH LOTHAR ,  KLINGBEIL PATRICK ,  HERPE JOACHIM ,  VOGT MIRKO

IPC: G03F7/09 ,  G03F7/00 ,  H01L21/31

Abstract: The method involves providing semiconductor wafers with a structured layer/layer stack, and applying an organic anti-reflection layer (41) on the layer/layer stack. A photoresist layer (1) is applied on the anti-reflection layer, and the photoresist layer is exposed in sections by an imaging device and a photomask. The photoresist layer is processed, where a structure of the photomask is formed as an opening in the photoresist layer.